Infineon Technologies 650V Automotive GaN Transistors - Bottom Cooled
Infineon Technologies 650V Automotive GaN Transistors - Bottom Cooled allows for high current, voltage breakdown, and switching frequency. Infineon Technologies transistors innovate with patented Island Technology® and GaNPX® packaging. Island Technology cell layout realizes high current die and high yield. GaNPX packaging enables low inductance and low thermal resistance in a small package. The GS-065-060-5-B-A is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high-power applications. These features combine to provide high-efficiency power switching.
Features
- AEC-Q101 and AutoQual+™ (enhanced AEC-Q101)
- 650V enhancement mode power transistor
- Bottom-cooled, low inductance GaNPX package
- RDS(on) = 25mΩ
- IDS(max) = 60A
- Ultra-low FOM
- Simple gate drive requirements (0V to 6V)
- Transient tolerant gate drive (-20/+10V)
- High switching frequency (>10MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Small 11mm2 x 9mm2 PCB footprint
- Dual gate pads for optimal board layout
- RoHS 3 (6+4) compliant
Applications
- On board chargers
- Traction drive
- DC-DC converters
- Industrial motor drives
- Solar inverters
- Bridgeless totem pole PFC
Package & Circuit
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Publicado: 2023-03-06
| Actualizado: 2024-08-22