Infineon Technologies 650V Automotive E-Mode Gan Transistors
Infineon Technologies 650V Automotive E-Mode Gan Transistors allow for high current, voltage breakdown, and switching frequency. Infineon Technologies transistors innovate with patented Island Technology® and GaNPX® packaging. Island Technology cell layout realizes high current die and high yield. GaNPX packaging enables low inductance and low thermal resistance in a small package. The GS-065-060-5-T-A transistors are top-side cooled, offering low junction-to-case thermal resistance for demanding high-power applications. These features combine to provide high-efficiency power switching. The GS-065-060-5-B-A is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high-power applications.
Features
- AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101)
- 650V enhancement mode power transistor
- Top- and bottom-cooled, low-inductance GaNPX package
- RDS(on) = 25 mΩ
- IDS(max) = 60A
- Ultra-low FOM
- Simple gate drive requirements (0V to 6V)
- Transient tolerant gate drive (-20/+10V)
- High switching frequency (>10MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Small 11mm2 x 9 mm2 PCB footprint
- Dual gate pads for optimal board layout
- RoHS 3 (6+4) compliant
Applications
- On board chargers
- Traction drive
- DC-DC converters
- Industrial motor drives
- Solar inverters
- Bridgeless Totem Pole PFC
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Infineon Technologies 650V Automotive GaN Transistors - Top Cooled
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Infineon Technologies 650V Automotive GaN Transistors - Bottom Cooled
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Infineon Technologies GS66516B 650V GaN Bottom-side Cooled Transistor
Designed for very low junction-to-case thermal resistance for demanding high-power applications.
Publicado: 2023-03-06
| Actualizado: 2024-08-22