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Infineon Technologies GS665xx Enhancement-Mode Silicon Power Transistors

Infineon Technologies GS665xx Enhancement-Mode High Electron Mobility Transistors (E-HEMT) feature high current, high voltage breakdown, and high switching frequency. These power transistors include Island Technology cell layout with high-current die and high yield, and GaNPX®  small packaging enables low inductance and low thermal resistance. These power transistors offer very low junction-to-case thermal resistance for high-power applications. The GS665xx enhancement-mode silicon power transistors are available as bottom-sided or top-sided cooled transistors. These power transistors provide ultra-low FOM die, reverse current capability, and zero reverse recovery loss.

The GS665xx enhancement-mode silicon power transistors operate at an operating temperature range of -55°C to 150°C. They offer a>10MHz high switching frequency and 750V transient drain-to-source voltage. Typical applications include AC-DC converters, DC-DC converters, uninterruptable power supplies, industrial motor drives, appliance motor drives, fast battery charging, power adapters, and wireless power transfer.

Features

  • Top and bottom-side cooled configuration
  • Ultra-low FOM Island Technology® die
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • RoHS3 (6+4) compliant
  • Low inductance package

Specifications

  • >10MHz switching frequency
  • -55°C to 150°C operating temperature range
  • 0V to 6V simple gate drive voltage range
  • 650V enhancement mode power transistor
  • 750V transient drain-to-source voltage
  • -20V/10V transient tolerant gate drive voltage

Applications

  • AC-DC converters
  • DC-DC converters
  • Uninterruptable power supplies
  • Industrial motor drives
  • Appliance motor drives
  • Fast battery charging
  • Class D audio amplifiers
  • Power adapters
  • Wireless power transfer

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View Results ( 13 ) Page
N.º de artículo Nombre Mfr Hoja de datos Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Qg - Carga de puerta Tiempo de caída Tiempo de subida Tiempo de retardo de apagado típico Tiempo típico de demora de encendido
GS66504B-TR Infineon GS66504B-TR Hoja de datos 15 A 130 mOhms 3.3 nC
GS66504B-MR Infineon GS66504B-MR Hoja de datos 15 A 130 mOhms 3.3 nC
GS66516B-MR Infineon GS66516B-MR Hoja de datos 60 A 32 mOhms 14.2 nC 22 ns 12.4 ns 14.9 ns 4.6 ns
GS66506T-TR Infineon GS66506T-TR Hoja de datos 22.5 A 90 mOhms 4.5 nC
GS66508B-MR Infineon GS66508B-MR Hoja de datos 30 A 63 mOhms 6.1 nC 5.2 ns 3.7 ns 8 ns 4.1 ns
GS66508B-TR Infineon GS66508B-TR Hoja de datos 30 A 63 mOhms 6.1 nC
GS66508T-MR Infineon GS66508T-MR Hoja de datos 30 A 63 mOhms 6.1 nC 5.2 ns 3.7 ns 8 ns 4.1 ns
GS66508T-TR Infineon GS66508T-TR Hoja de datos 30 A 63 mOhms 6.1 nC
GS66516T-MR Infineon GS66516T-MR Hoja de datos 60 A 32 mOhms 14.2 nC 22 ns 12.4 ns 14.9 ns 4.6 ns
GS66516T-TR Infineon GS66516T-TR Hoja de datos 60 A 32 mOhms 14.2 nC
Publicado: 2020-08-26 | Actualizado: 2024-09-04