Toshiba TK110Z65Z Silicon N-Channel DTMOSIV Series MOSFET
Toshiba TK110Z65Z Silicon N-Channel DTMOSIV Series MOSFET features a low 0.092Ω (typical) drain-source on-resistance, high-speed switching properties, and low capacitance. The TK110Z65Z also features an enhancement mode making it ideal for use in switching power supply applications.
The Toshiba TK110Z65Z MOSFET is provided in a TO-247-4L package and is RoHS compliant.
Features
- Low drain-source on-resistance
- RDS(ON) = 0.092Ω (typical)
- High-speed switching properties with low capacitance
- Enhancement mode: Vth = 3V to 4V (VDS = 10V, ID = 1.02mA)
- 650V drain-source voltage (VDSS)
- ±30V gate-source voltage (VGSS)
- 24A DC drain current (ID)
- 96A pulsed drain current (IDP)
- 190W power dissipation (PD) at TC =25°C
- 150°C channel temperature (TCH)
- 15.94mm x 20.95mm x 5.0mm TO-247-4L package
- RoHS compliant
Applications
- Switching power supplies
Related Products
Toshiba DTMOSIV Series MOSFETs
State-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on).
Internal Circuit
Package Outline
Publicado: 2021-02-22
| Actualizado: 2022-03-11