ROHM Semiconductor SP8M Power MOSFETs
ROHM Semiconductor SP8M Power MOSFETs are low on-resistance devices housed in a small surface-mount package (SOP8). The SP8M features Pb-free plating and is RoHS compliant. The MOSFETs are also halogen-free, have Sn100% plating, and are AEC-Q101 qualified.
Features
- Low on-resistance
- Small surface mount package (SOP8)
- Pb-free plating; RoHS compliant
- Halogen free
- Sn100% plating
- AEC-Q101 qualified
Applications
- Switching
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View Results ( 7 ) Page
| N.º de artículo | Hoja de datos | Descripción | Vds - Tensión disruptiva entre drenaje y fuente | Id - Corriente de drenaje continua | Rds On - Resistencia entre drenaje y fuente |
|---|---|---|---|---|---|
| SP8M6HZGTB |  |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AECQ | 30 V | 5 A, 3.5 A | 51 mOhms, 90 mOhms |
| SP8M31HZGTB | |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AECQ | 60 V | 4.5 A | 65 mOhms, 70 mOhms |
| SP8M21HZGTB | |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AECQ | 45 V | 6 A, 4 A | 25 mOhms, 46 mOhms |
| SP8M4HZGTB | |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AECQ | 30 V | 9 A, 7 A | 18 mOhms, 28 mOhms |
| SP8M41HZGTB | |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AECQ | 80 V | 3.4 A, 2.6 A | 130 mOhms, 240 mOhms |
| SP8M51HZGTB | |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AECQ | 100 V | 3 A, 2.5 A | 170 mOhms, 290 mOhms |
| SP8M3HZGTB | |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AECQ | 30 V | 5 A, 4.5 A | 51 mOhms, 56 mOhms |
Publicado: 2022-02-08
| Actualizado: 2022-03-11