IXYS X4-Class 135V-200V Power MOSFETs
IXYS X4-Class 135V-200V Power MOSFETs are developed using a charge compensation principle and proprietary process technology. This technology results in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses and lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads and lowers gate drive requirements. These MOSFETs are also avalanche-rated and exhibit a superior dv/dt performance. Due to its positive temperature coefficient of on-state resistance, these MOSFETs can be operated in parallel to meet higher current requirements.
Features
- Low on-resistance RDS(ON) and gate charge Qg
- dv/dt ruggedness
- Avalanche capability
- International standard packages
Applications
- Synchronous rectification in switching power supplies
- Motor control (48V-80V systems)
- DC-DC converters
- Uninterruptible power supplies (UPS)
- Electric forklifts
- Class-D audio amplifiers
- Telecom systems
Related MOSFETS
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IXYS Ultra Junction MOSFETs
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