CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

Results: 30
Select Image Part # Mfr. Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 839In Stock
Cut Tape
S/28.73
S/18.37
S/16.89
S/16.62
Reel
S/15.41
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 26 A 125 mOhms - 7 V, + 20 V 5.1 V 23 nC - 55 C + 175 C 136 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 617In Stock
Cut Tape
S/51.69
S/32.07
S/30.24
S/28.77
Reel
S/28.14
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 47 A 45 mOhms - 7 V, + 20 V 5.1 V 46 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 368In Stock
S/27.17
S/19.27
S/16.54
S/15.57
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 5.7 V 13 nC - 55 C + 150 C 94 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 303In Stock
Cut Tape
S/37.06
S/22.07
S/20.75
S/19.89
Reel
S/19.62
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 36 A 83 mOhms - 7 V, + 20 V 5.1 V 34 nC - 55 C + 175 C 181 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 240In Stock
S/25.89
S/16.50
S/15.65
S/15.61
S/14.56
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 2,509In Stock
Cut Tape
S/62.36
S/37.13
Reel
S/35.11
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 56 A 41 mOhms - 7 V, + 20 V 5.1 V 63 nC - 55 C + 175 C 300 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package 6,935In Stock
3,000Expected 7/29/2027
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S/29.43
S/16.00
S/14.67
S/13.90
Reel
S/12.42
Min.: 1
Mult.: 1
Max.: 1,000
: 1,000
SMD/SMT TO-263-7 1 Channel 1.7 kV 9.8 A 450 mOhms - 10 V, + 20 V 4.5 V 11 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 3,844In Stock
Cut Tape
S/29.23
S/15.69
S/14.36
S/14.32
Reel
S/13.00
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 18 A 189 mOhms - 7 V, + 20 V 5.1 V 13.4 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1,751In Stock
S/58.23
S/36.24
S/33.79
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 362In Stock
S/41.88
S/22.77
S/21.06
S/20.90
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 900In Stock
S/41.49
S/25.42
S/23.51
S/22.23
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1,467In Stock
S/61.15
S/35.07
S/34.80
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 59 A 34 mOhms - 5 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 313In Stock
S/40.48
S/23.32
S/21.60
S/21.53
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 2,502In Stock
Cut Tape
S/25.42
S/13.47
S/12.03
Reel
S/10.78
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 13 A 294 mOhms - 7 V, + 20 V 5.1 V 9.4 nC - 55 C + 175 C 83 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 1,430In Stock
Cut Tape
S/22.42
S/11.76
S/10.70
S/9.65
Reel
S/9.65
Min.: 1
Mult.: 1
Max.: 500
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 4.7 A 468 mOhms - 7 V, + 20 V 5.1 V 5.9 nC - 55 C + 175 C 65 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 386In Stock
720Expected 10/16/2026
S/37.13
S/20.01
S/18.45
S/16.70
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 26 A 117 mOhms - 7 V, + 23 V 5.7 V 21 nC - 55 C + 150 C 115 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 3,907In Stock
S/25.34
S/14.44
S/13.23
S/12.49
S/12.07
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 13 A 289 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 314In Stock
S/32.19
S/18.29
S/16.85
S/16.11
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 26 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 473In Stock
S/29.47
S/15.45
S/14.21
S/13.12
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 480In Stock
480Expected 10/1/2026
S/37.60
S/21.29
S/19.66
S/18.02
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 26 A 117 mOhms - 7 V, + 23 V 5.7 V 21 nC - 55 C + 150 C 115 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package 19In Stock
25,000On Order
Cut Tape
S/20.79
S/11.02
S/10.04
S/8.72
Reel
S/8.14
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.7 kV 5.2 A 1 Ohms - 10 V, + 20 V 4.5 V 5 nC - 55 C + 175 C 68 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package 57In Stock
2,000On Order
Cut Tape
S/25.18
S/13.31
S/12.11
S/11.02
Reel
S/9.77
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.7 kV 7.4 A 650 mOhms - 10 V, + 20 V 4.5 V 8 nC - 55 C + 175 C 88 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
480Expected 10/8/2026
S/67.89
S/41.73
S/37.68
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 73In Stock
240On Order
S/28.61
S/16.62
S/15.26
S/14.29
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 3.5 V 13 nC - 55 C + 175 C 94 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 53In Stock
960On Order
S/22.93
S/12.18
S/11.29
S/10.32
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 4.7 A 455 mOhms - 7 V, + 23 V 5.7 V 5.3 nC - 55 C + 150 C 60 W Enhancement CoolSiC