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Toshiba DF2xxM5CT ESD Protection Diodes

Toshiba DF2xxM5CT ESD Protection Diodes protect semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. The ESD Protection Diodes feature low dynamic resistance and superior protective performance, utilizing snapback characteristics.

The Toshiba DF2xxM5CT ESD Protection Diodes are offered in an ultra-compact 1.0mm × 0.6mm package. This compact package is suitable for use in high-density board layouts such as mobile devices.

Features

  • Suitable for use with a 3.3V or 5V signal line
  • Protects devices with its high ESD performance (VESD = ±20kV (Contact / Air) @IEC61000-4-2)
  • Low dynamic resistance protects semiconductor devices from static electricity and noise
  • Snapback characteristics realizing low clamping voltage protects semiconductor devices
  • 1.0mm × 0.6mm CST2 Compact package

Applications

  • Mobile equipment
  • Smartphones
  • Tablets
  • Notebook PCs
  • Desktop PCs

DF2S5M5CT & DF2S6M5CT Circuit Diagram

Location Circuit - Toshiba DF2xxM5CT ESD Protection Diodes

DF2B5M5CT & DF2B6M5CT Circuit Diagram

Location Circuit - Toshiba DF2xxM5CT ESD Protection Diodes
View Results ( 5 ) Page
N.º de artículo Hoja de datos Descripción
DF2S6M5CT,L3F DF2S6M5CT,L3F Hoja de datos Diodos de protección contra ESD / Diodos TVS Unidirectional ESD Diode VRWM:5.0 V, SOD-882 CT:0.6-0.9pF
DF2B5M5CT,L3F DF2B5M5CT,L3F Hoja de datos Diodos de protección contra ESD / Diodos TVS Bidirectional ESD Diode VRWM:+/-3.3 V, SOD-882 CT:0.3-0.45pF
DF2B6M5CT,L3F DF2B6M5CT,L3F Hoja de datos Diodos de protección contra ESD / Diodos TVS Bidirectional ESD Diode VRWM:+/-5.0 V, SOD-882 CT:0.3-0.45pF
DF2S5M5CT,L3F DF2S5M5CT,L3F Hoja de datos Diodos de protección contra ESD / Diodos TVS Unidirectional ESD Diode VRWM:3.3 V, SOD-882 CT:0.6-0.9pF
DF2B6M4BSL,L3F DF2B6M4BSL,L3F Hoja de datos Diodos de protección contra ESD / Diodos TVS ESD 5.5V BI
Publicado: 2022-01-10 | Actualizado: 2022-04-19