Taiwan Semiconductor BSSx N-Channel & P-Channel Power MOSFETs
Taiwan Semiconductor BSSx N-Channel and P-Channel Power MOSFETs feature a low drain-source on-state resistance (RDS(ON)), that minimizes conductive losses. The N-channel power MOSFETs enable a low gate charge for fast power switching. The BSSx power MOSFETs operate from -55°C to 150°C temperature range. These N-channel power MOSFETs are ideal for low side load switching, level shift circuits, and general switch circuits.
Features
- Low RDS(ON) to minimize conductive losses
- Logic level
- Low gate charge for fast power switching
- ESD protected 2.5KV (HBM)
- -55°C to 150°C operating temperature range
- RoHS compliant
- Halogen-free according to IEC 61249-2-21
Applications
- Low side Load switching
- Level shift circuits
- General switch circuits
View Results ( 4 ) Page
| N.º de artículo | Hoja de datos | Vds - Tensión disruptiva entre drenaje y fuente | Id - Corriente de drenaje continua | Rds On - Resistencia entre drenaje y fuente | Vgs th - Tensión umbral entre puerta y fuente | Qg - Carga de puerta | Dp - Disipación de potencia | Polaridad del transistor | Transconductancia hacia delante - Mín. | Paquete / Cubierta |
|---|---|---|---|---|---|---|---|---|---|---|
| BSS138 RFG |  |
50 V | 260 mA | 2.5 Ohms | 1.6 V | 1 nC | 357 mW | N-Channel | 0.8 S | SOT-23-3 |
| BSS84 RFG | |
60 V | 150 mA | 8 Ohms | 2 V | 1.9 nC | 357 mW | P-Channel | 0.5 S | SOT-23-3 |
| BSS84W RFG | |
60 V | 140 mA | 8 Ohms | 2 V | 1.9 nC | 298 mW | P-Channel | 0.5 S | SOT-323-3 |
| BSS123W RFG | |
100 V | 160 mA | 5 Ohms | 2.5 V | 2 nC | 298 mW | N-Channel | 0.5 S | SOT-323-3 |
Publicado: 2021-03-08
| Actualizado: 2022-03-11