STMicroelectronics RFxL RF Power LDMOS Transistors

STMicroelectronics RFxL RF Power LDMOS Transistors offer high-performance intended for multiple applications with different frequency bands. The RFxL RF Power Transistors are available in B4E, B2, and LBB packages.

The RF5L08350CB4 is a 400W 50V high-performance, internally matched LDMOS FET designed for multiple applications over the frequency band 0.4 to 1GHz.

The RF3L05250CB4 is a 250W 28/32V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1GHz. The RF3L05250CB4 pin connection is used in class AB/B and C for all typical modulation formats.

The RF2L16180CB4 is 180W, 28V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600MHz. Four leads can be configured as single-ended, 180-degree push-pull or 90-degree hybrid, or Doherty with proper external matching network.

The RF2L36075CF2 is a 75W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6GHz. The RF2L36075CF2 can be used in class AB, B, or C for all typical cellular base station modulation formats.

Features

  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internal input matching for ease of use
  • Large positive and negative gate-source voltage range for improved class C operation
  • In compliance with the european directive 2002/95/EC

Applications

  • Telecom
  • S-Band radar
  • Multicarrier base station
  • Industrial, scientific and medical
  • 2-30MHz HF or short wave communication
  • 30-88MHz ground communication
  • 118-140MHz Avionics
  • 136-174MHz commercial ground communication
  • 30-512MHz Jammer, ground/air communication
  • HF to 1000 MHz ISM - instrumentation
  • Wideband lab amplifier from 0.4 to 1GHz
  • Digital UHF TV 470-860MHz
  • 650MHz particle accelerator
  • 915MHz RF energy applications

Pin Connections

STMicroelectronics RFxL RF Power LDMOS Transistors
Publicado: 2021-06-08 | Actualizado: 2022-03-11