STMicroelectronics GANSPIN612 Half-Bridge GaN Motor Driver
STMicroelectronics GANSPIN612 Half-Bridge GaN Motor Driver is an advanced power system-in-package (SiP) integrating two enhancement mode GaN transistors in a half-bridge configuration driven by a state-of-the-art high-voltage, high-frequency gate driver. The integrated power GaNs have RDS(ON) of 270mΩ and a 650V drain-source breakdown voltage, while the integrated bootstrap diode can easily supply the high-side of the embedded gate driver.
Designed for motion control, the GANSPIN612 optimizes the output dV/dt to 10V/ns (typ.) for both hard-on and hard-off. This feature is required in motor control for EMI, motor winding, and ball bearing reliability. The GANSPIN612 is available in a compact 9mm x 9mm x 1mm QFN package and operates over the industrial temperature range of -40°C to +125°C.
The STMicroelectronics GaNSPIN612 is pin-to-pin compatible with GaNSPIN611 [RDS(ON) of 138mΩ] to maximize scalability within a platform approach.
Features
- Power SiP family integrating high-voltage GaN transistors in a half-bridge configuration with a high-voltage gate driver
- RDS(ON) = 270mΩ
- IDS(MAX) = 5.5A
- Reverse conduction capability and zero reverse recovery loss
- 10V/ns (typ.) output dV/dt in both hard-on and hard-off, tailored for motor control
- Linear regulators to regulate the high-side and low-side driver supply voltage
- Externally adjustable turn-on dV/dt
- Internal bootstrap diode
- Comparator for overcurrent detection with Smart Shutdown function
- UVLO protection on VCC, VHS, and VLS
- Interlocking function, shutdown, standby, and fault pins
- 55ns gate driver leading to an overall 150ns (typ.) output propagation delay
- 3.3V to 20V compatible inputs with hysteresis and pull-down
Applications
- Home appliances
- Compressors
- Pumps
- Fans
- Personal care appliances
- Factory automation
- Servo drives
- Power tools
Application Schematic
Block Diagram
