ROHM Semiconductor GNP2x 650V Enhancement Mode GaN HEMTs
ROHM Semiconductor GNP2x 650V Enhancement Mode GaN HEMTs are designed for high-performance power conversion applications. These High-Electron-Mobility Transistors (HEMTs) feature a high breakdown voltage and a low gate charge. The GNP2x GaN HEMTs offer high efficiency, high power density, and fast switching capabilities. These GaN HEMTs feature an 8.5V transient gate-to-source voltage and operate within the -55°C to 150°C temperature range. Typical applications include high switching frequency and high-density converters.
Features
- 650V E-mode GaN HEMT
- Resistance
- 50mΩ (GNP2050TEC-Z)
- 70mΩ (GNP2070TEC-Z and GNP2070TD-Z)
- 130mΩ (GNP2130TEC-Z)
- Gate charge
- 2.8nC (GNP2130TEC-Z)
- 4.7nC (GNP2070TEC-Z)
- 5.2nC (GNP2070TD-Z)
- 6.4nC (GNP2050TEC-Z)
- 800V transient drain to source voltage
- -10V to 6.5V gate to source voltage
- 8.5V transient gate to source voltage
- -55°C to +150°C operating temperature range
- Packages:
- TOLL-8N (GNP2070TD-Z)
- DFN8080CK (GNP2050TEC-Z, GNP2070TEC-Z, and GNP2130TEC-Z)
Applications
- High-switching frequency converters
- High-density converters
Application Circuit Diagram
Publicado: 2025-01-07
| Actualizado: 2025-10-09