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onsemi NTMC083NP10M5L Dual N- & P- Channel Power MOSFET

onsemi NTMC083NP10M5L Dual N- and P- Channel Power MOSFET is designed with low gate charge (QG) and capacitance to minimize the driver losses. This MOSFET features low drain-to-source on-resistance (RDS(on)) to minimize conduction losses. This device is compactly designed with a standard footprint of 5mm x 6mm and is not ESD protected. The NTMC083NP10M5L power MOSFET is ideally used in power tools, battery-operated vacuums, Unmanned Aerial Vehicle (UAV)/drones, material handling, motor drive, and home automation.

Features

  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • Not ESD protected
  • Small footprint of 5mm x 6mm for compact design
  • Pb free and Halogen/BFR free
  • RoHS compliant

Applications

  • Power tools
  • Battery operated vacuums
  • Unmanned Aerial Vehicle (UAV) / Drones
  • Material handling
  • Motor drive
  • Home automation
Publicado: 2021-08-27 | Actualizado: 2022-03-11