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onsemi NGTB25N/NGTB40N Isolated Gate Bipolar Transistors

onsemi NGTB25N and NGTB40N Isolated Gate Bipolar Transistors (IGBT) feature a robust and cost-effective Ultra Field Stop Trench construction. Low switch losses and an ultra-fast recovery diode make them ideal for high frequency solar, UPS and inverter welder applications. Incorporated into these onsemi devices is a soft and fast co-packaged free wheeling diode with a low forward voltage.

Features

  • Extremely efficient trench with ultra field stop technology
  • TJmax = 175°C
  • Soft fast reverse recovery diode
  • Optimized for high-speed switching
  • Low VCES
  • TO247-3 package
  • Lead−free

Applications

  • Solar inverters
  • Uninterruptible power inverter supplies
  • Welding
  • Motor drive inverters
  • Industrial switching
View Results ( 2 ) Page
N.º de artículo Hoja de datos Descripción
NGTB40N120FL3WG NGTB40N120FL3WG Hoja de datos IGBTs IGBT, Ultra Field Stop -1200V 40A
NGTB25N120FL3WG NGTB25N120FL3WG Hoja de datos IGBTs IGBT, Ultra Field Stop - 1200V 25A
Publicado: 2016-09-14 | Actualizado: 2022-04-14