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onsemi AFGHxL25T Single N-Channel 1200V 25A IGBTs

onsemi AFGHxL25T Single N-Channel 1200V 25A Insulated Gate Bipolar Transistors (IGBTs) feature a robust and cost-effective Field Stop VII Trench construction. The onsemi AFGHxL25T provides superior performance in demanding switching applications. Low on-state voltage and minimal switching loss offer optimum hard and soft switching topology performance in automotive applications.

Features

  • Extremely efficient trench with field stop technology
  • Maximum junction temperature (TJ) of 175°C
  • Short circuit rated and low saturation voltage
  • Fast switching and tightened parameter distribution
  • AEC-Q101 qualified, PPAP available upon request
  • These devices are Pb-free, halogen-free/BFR-free, and are RoHS-compliant

Applications

  • HEV-EV PTC heater
  • HEV-EV e-compressor
  • OBC

Pin Connections

Schematic - onsemi AFGHxL25T Single N-Channel 1200V 25A IGBTs
View Results ( 4 ) Page
N.º de artículo Hoja de datos Paquete / Cubierta Voltaje de saturación colector-emisor Dp - Disipación de potencia
AFGH4L25T120RW AFGH4L25T120RW Hoja de datos TO-247-4 1.37 V 416 W
AFGH4L25T120RWD AFGH4L25T120RWD Hoja de datos TO-247-4 1.37 V 416 W
AFGHL25T120RW AFGHL25T120RW Hoja de datos TO-247-3 1.38 V 468 W
AFGHL25T120RWD AFGHL25T120RWD Hoja de datos TO-247-3 1.38 V 468 W
Publicado: 2024-07-22 | Actualizado: 2024-08-02