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MACOM MASW-011102 SPDT Non-Reflective GaAs RF Switch

MACOM MASW-011102 Low-Power SPDT Non-Reflective GaAs RF Switch supports broadband operation from DC to 30GHz, with a low insertion loss of 1.8dB and high isolation of 40dB at 30GHz. The device utilizes MACOM’s patented low gate-lag GaAs process to deliver uncompromising performance and fast switching speeds of up to 40ns. The switch is offered in a lead-free, 3mm2, 14-lead PQFN plastic package and is fabricated using a robust process containing full surface passivation to ensure the highest performance and reliability. The MASW-011102 is optimized for applications spanning test and measurement, EW, and broadband communication systems.

Features

  • Broadband performance
  • Low 1.6dB insertion loss
  • 30dB high isolation
  • Fast 12ns switching speed
  • Reflective configuration
  • Ultra-low DC power consumption
  • 3mm2 14-lead PQFN package
  • Lead-free and RoHS-compliant

Applications

  • Test and measurement
  • EW/broadband communication systems

Specifications

  • 17.7GHz to 31.0GHz frequency range
  • 8.5V maximum control voltage
  • 25dB maximum input power
  • 2.0dB maximum insertion loss, 1.6dB typical
  • 25dB minimum isolation, 30dB typical
  • 0.1dB typical port amplitude imbalance
  • 5° typical port phase imbalance
  • 15dB typical return loss
  • 60ns typical settling time
  • 2µA maximum control current (complementary logic), 1µA typical
  • -40°C to +85°C operating temperature range

Functional Schematic

Schematic - MACOM MASW-011102 SPDT Non-Reflective GaAs RF Switch
Publicado: 2019-11-05 | Actualizado: 2023-09-07