Infineon Technologies EDT3 Si IGBT Chips

Infineon Technologies Electric Drive Train, 3rd Gen. (EDT3) Si IGBT Chips feature 750V and 1200V classes and deliver high output current, making them ideal for main inverter applications in electric vehicles (EVs), including plug-in hybrid EVs (PHEVs), battery EV (BEVs), and range-extended EVs (REEVs). The next generation EDT3 provides a notable advancement over the EDT2, reaching up to 20% lower total losses at high loads while remaining efficient at low loads. This advancement is due to optimizations that diminish chip losses and boost the maximum junction temperature to +185°C, balancing low-load efficiency and high-load performance. EVs using Infineon EDT3 chips achieve an extended range and lowered energy consumption, delivering a more sustainable and cost-effective driving experience. These bare dies are designed for 400V and 800V systems.

Features

  • Reliable performance
  • Significant advancements over EDT2, achieving up to 20% lower total losses at high loads while maintaining efficiency at low loads
  • Balances high-load performance and low-load efficiency
  • Helps EVs achieve extended range and reduce energy consumption
  • Contributes to more sustainable and cost-effective driving experiences
  • Provides high voltage and current handling capabilities with low conduction and switching losses
  • Well-suited for main inverter applications
  • Reduced chip size with optimized design, resulting in smaller modules

Applications

  • EVs
  • PHEVs
  • BEVs
  • REEVs

Specifications

  • Designed for 400V and 800V systems
  • Up to 750V and 1200V maximum collector-emitter voltage ratings
  • +185°C maximum virtual junction temperature
Publicado: 2025-04-18 | Actualizado: 2025-05-06