Infineon Technologies CoolSiC™ MOSFET 1200V Evaluation Platform
Infineon Technologies CoolSiC™ MOSFET 1200V Evaluation Platform demonstrates the characteristics of the 45mΩ CoolSiC™ 1200V SiC Trench MOSFET (IMZ120R045M1) when coupled with the EiceDriver™ Gate Driver ICs. The Evaluation Platform includes a modular Main Board (EVALPSSICDPMAINTOBO1), a Miller Clamp Daughter Board (REFPSSICDP1TOBO1), and a Bipolar Supply Daughter Board (REFPSSICDP2TOBO1).
Features
- CoolSiC MOSFET 1200V main board
- VCC2 gate drive voltage supply from -5V to +20V
- VCC1 supply fixed at +5V
- Gate connection via SMA BNC connector
- Current measurement via optional coaxial shunt
- Optimized commutation loop
- External load inductor connection
- Includes heatsink
- Miller clamp daughterboard
- Minimal gate drive loop
- Rg ON and Rg OFF are changeable
- VCC2 +15V to 0V GND
- Active miller clamp function
- Bipolar supply daughterboard
- Minimal gate drive loop
- Rg ON and Rg OFF are changeable
- VCC2 +15V to -5V GND2
- Possibility for negative power supply
On The Board
Infineon Technologies CoolSiC™ 1200V SiC Trench MOSFETs
Optimized to deliver the lowest losses in the application and the highest reliability in operation.
Infineon Technologies 1EDNx550 TDI EiceDRIVER™ Gate Driver ICs
Features Truly Differential Inputs (TDI) to prevent false triggering of power MOSFETs.
Board Layout
Block Diagram
View Results ( 2 ) Page
| N.º de artículo | Hoja de datos | Descripción |
|---|---|---|
| REFPSSICDP2TOBO1 |  |
Herramientas de desarrollo de administración de IC |
| REFPSSICDP1TOBO1 | |
Herramientas de desarrollo de administración de IC Evaluation Board |
Publicado: 2020-03-13
| Actualizado: 2024-10-11