Infineon Technologies CoolMOS™ P7 MOSFETs

Infineon Technologies CoolMOS™ P7 MOSFETs deliver a best-in-class price/performance ratio with excellent ease of use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications, including adapters and chargers, lighting, audio SMPS, AUX, and industrial power. The 600V CoolMOS P7 power MOSFETs target low-power and high-power SMPS applications like solar inverters, servers, telecom, and EV charging stations. Infineon P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Features

120V to 950V drain-source breakdown voltage
24mΩ to 4.5Ω R_DS(ON) drain-source resistance

1.5A to 101A continuous drain current
0.5W to 291W power dissipation

600V CoolMOS P7 MOSFETs

Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast-switching SJ MOSFET with excellent ease of use. The 600V P7 features a very low ringing tendency, outstanding robustness of the body diode against hard commutation, and excellent ESD capability. Extremely low switching and conduction losses make switching applications more efficient, compact, and cooler.

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700V CoolMOS P7 MOSFETs

Infineon 700V CoolMOS P7 MOSFETs feature a revolutionary technology for high voltage power MOSFETs. The 700V is designed according to the super junction (SJ) principle and pioneered by Infineon. The 700V CoolMOS P7 is an optimized platform that targets cost-sensitive applications in consumer markets like chargers, adapters, lighting, TVs, and more.

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800V CoolMOS P7 MOSFETs

Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease of use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature.

The transistors feature optimized device parameters, like over 50% reduction in Eoss and Qg and reduced Ciss and Coss. The CoolMOS P7 enables higher power density designs through lower switching losses and better DPAK R_DS(on) products. The CoolMOS P7 is a perfect fit for low-power SMPS applications.

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950V CoolMOS P7 SJ MOSFETs

Infineon 950V CoolMOS P7 SJ MOSFETs employ 950V super junction technology, combining best-in-class performance with state-of-the-art ease of use. These MOSFETs have integrated Zener diode Electro Static Discharge (ESD) protection. The integrated diode improves ESD robustness, reduces ESD-related yield loss, and provides exceptional ease-of-use levels. These MOSFETs offer 3V V_GS(th) and a narrow tolerance of only ±0.5V, making them easy to drive and design. The 950V SJ MOSFETs provide low DPAK R_{DS(on), enabling} higher density while decreasing BOM and assembly costs.

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