iDEAL Semiconductor SuperQ™ MOSFETs for High-Voltage BMS
iDEAL Semi SuperQ™ MOSFETs for High-Voltage Battery Management Systems are engineered specifically for high short-circuit robustness in 72V to 144V battery packs. The SuperQ MOSFETs combine extremely low RDS(on) with outstanding Short-Circuit Withstand Capability (SCWC) in a single silicon platform.
The charge MOSFET is limited by body-diode conduction under certain fault conditions, allowing the discharge device to absorb and interrupt the surge. If the device fails, the pack can not be isolated, which could cause thermal runaway. The discharge MOSFET defines BMS reliability; therefore, SCWC is not just a spec; it is a primary safety metric.
The iDEAL Semi SuperQ MOSFETs performance is embedded in its silicon architecture, which enables robustness. A larger conduction region increases current density capability and structural strength under extreme surge conditions.
The optimized silicon geometry facilitates very low on-resistance without narrowing conduction pathways, a common limitation in standard designs.
Features
- For a typical 80V battery pack design, SuperQ devices can enable:
- Fewer MOSFETs in parallel to meet short-circuit requirements
- Reduced PCB area and thermal complexity
- Lower total bill of materials
- Lower conduction losses
Applications
- 72V to 144V e-mobility battery packs
- Light electric vehicles and 3-wheelers
- UAV and drone battery systems
- Robotics battery modules
- Professional and industrial power tools
- Energy storage subsystems
SuperQ™ MOSFETs
iDEAL Semiconductor SuperQ™ Technology
Redefines the fundamental structure of the power MOSFET at the atomic level, from 50% to 95%.
iDEAL Semiconductor iS15M7R1S1C SuperQ™ 150V N-Channel Power MOSFETs
Designed to deliver superior efficiency and switching performance in demanding power applications.
iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFET
Designed for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET
Delivers ultra-low conduction and switching losses in a robust TO-220 package.
iDEAL Semiconductor iS20M028S1P SuperQ™ 200V N-Channel Power MOSFET
Delivers ultra-low conduction and switching losses in a robust TO-220 package.
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.
iDEAL Semiconductor iS15M2R5S1T SuperQ™ 150V N-Channel Power MOSFET
Delivers ultra-low conduction and switching losses in a robust TOLL package.
iDEAL Semiconductor iS20M5R5S1T 200V N-channel SuperQ™ Power MOSFETs
Features low switching losses, QSW, and EOSS, suitable for high-efficiency SMPS and motor drives.
Additional Resources
Standard vs SuperQ Unit Cells
BMS with Discharge & Charge MOSFETs
