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Alliance Memory AS4C32M16MS / AS4C16M32MS 512M Low Power Mobile SDRAMs
Alliance Memory AS4C32M16MS / AS4C16M32MS 512M Low Power Mobile SDRAMs (MSDR) are high-speed CMOS double data rate two synchronous DRAMs. The AS4C32M16MS / AS4C16M32MS are four bank Synchronous DRAMs organized as 4 banks x 8Mbit x 16 and 4 banks x 4Mbit x 32.
The AS4C32M16MS / AS4C16M32MS achieve 166MHz high-speed data transfer rates up by employing a chip architecture. The chip architecture prefetches multiple bits and then synchronizes the output data to a system clock. All of the control, address, data input, and output circuits are synchronized with the positive edge of an externally supplied clock.
Features
4 banks x 8Mbit x 16 organization
4 banks x 4Mbit x 32 organization
Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge
Single Pulsed RAS Interface
Data Mask for Read/Write Control
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2, 3
Programmable Wrap Sequence: Sequential or Interleave
Programmable Burst Length: 1, 2, 4, 8, Full page for Sequential Type 1, 2, 4, 8 for Interleave Type
Multiple Burst Read with Single Write Operation
Automatic and Controlled Precharge Command
Random Column Address every CLK (1-N Rule)
Power Down Mode and Clock Suspend Mode
Auto Refresh and Self Refresh
Refresh Interval: 8192 cycles/64ms
Available in 54-ball (32M x16) and 90-ball (16M x32) FBGA
VDD=1.8V, VDDQ=1.8V
LVTTL Interface
Drive Strength (DS) Option: Full, 1/2, 1/4 and 3/4
Auto Temperature Compensated Self Refresh (Auto TCSR)
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