SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.

Resultados: 127
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (PEN) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Calificación Nombre comercial Empaquetado

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SF3 650V 50MOHM 1,905En existencias
S/62.36
S/39.86
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 58 A 50 mOhms 30 V 3 V 125 nC - 55 C + 150 C 378 W Enhancement SuperFET III Tube
onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SuperFET3 650V 67 mOhm 4,437En existencias
S/32.58
S/17.83
S/17.09
Min.: 1
Mult.: 1
Máx.: 1,000
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 44 A 67 mOhms 20 V 2.5 V 78 nC - 55 C + 150 C 46 W Enhancement SuperFET III Tube
onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SuperFET3 650V 99 mOhm 11,051En existencias
S/26.35
S/14.13
S/12.92
S/12.88
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 85 mOhms 30 V 2.5 V 57 nC - 55 C + 150 C 43 W Enhancement Tube

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SUPERFET3 650V 9,463En existencias
S/35.19
S/19.00
S/18.92
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 30 A 110 mOhms 30 V 3 V 58 nC - 55 C + 150 C 240 W Enhancement Tube

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SUPERFET3 FAST 650V TO247 826En existencias
S/106.03
S/78.43
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 75 A 19.3 mOhms 30 V 4 V 282 nC - 55 C + 150 C 625 W Enhancement Tube

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) FAST 650V TO220 3,606En existencias
S/40.72
S/22.89
Min.: 1
Mult.: 1
Máx.: 800
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 47 A 55 mOhms 30 V 4 V 96 nC - 55 C + 150 C 305 W Enhancement SuperFET III Tube
onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SUPERFET3 FAST 165MOHM TO-220F 11,890En existencias
S/21.56
S/11.37
S/10.32
S/9.69
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 19 A 165 mOhms 30 V 4 V 35 nC - 55 C + 150 C 33 W Enhancement Tube
onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SUPERFET3 650V D2PAK PKG 3,416En existencias
Cinta cortada
S/36.47
S/24.37
S/23.00
S/22.07
Envase tipo carrete
S/22.07
Min.: 1
Mult.: 1
Máx.: 800
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 40 A 82 mOhms 30 V 3 V 81 nC - 55 C + 150 C 313 W Enhancement Reel, Cut Tape, MouseReel
onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 650V FRFET,150M 2,130En existencias
Cinta cortada
S/22.58
S/11.83
S/9.96
S/9.19
Envase tipo carrete
S/9.19
Min.: 1
Mult.: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 24 A 150 mOhms 30 V 5 V 43 nC - 55 C + 150 C 192 W Enhancement Reel, Cut Tape

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) FRFET 650V 75A 27.4mOhm 1,256En existencias
S/88.55
S/61.54
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 75 A 27.4 mOhms 30 V 5 V 225 nC - 55 C + 150 C 595 W Enhancement Tube

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SF3 FRFET HF VERSION 82MOHM TO-220 7,748En existencias
S/34.06
S/18.72
S/18.10
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 40 A 82 mOhms 30 V 5 V 81 nC - 55 C + 150 C 313 W Enhancement Tube

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SUPERFET3 650V FRFET110MOHM TO220 566En existencias
S/27.79
S/14.99
S/13.82
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 110 mOhms 30 V 3 V 62 nC - 55 C + 150 C 240 W Enhancement SuperFET III Tube
onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SUPERFET3 650V D2PAK PKG 1,924En existencias
Cinta cortada
S/34.88
S/23.39
S/22.27
S/21.06
Envase tipo carrete
S/21.06
Min.: 1
Mult.: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 40 A 82 mOhms 30 V 3 V 81 nC - 55 C + 150 C 313 W Enhancement AEC-Q101 SuperFET III Reel, Cut Tape, MouseReel
onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SUPERFET3 650V 17A 180 mOhm 2,464En existencias
Cinta cortada
S/26.12
S/13.90
S/12.69
S/11.83
S/11.17
Envase tipo carrete
S/11.17
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT Power-88-4 N-Channel 1 Channel 650 V 17 A 180 mOhms 30 V 2.5 V 33 nC - 55 C + 150 C 139 W Enhancement SuperFET III Reel, Cut Tape, MouseReel

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SUPERFET3 FAST 360MOHM DPAK 5,467En existencias
Cinta cortada
S/13.78
S/6.93
S/6.07
S/4.90
S/4.71
Envase tipo carrete
S/4.71
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 10 A 360 mOhms 30 V 4 V 17.5 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SUPERFET3 650V TO247 266En existencias
S/70.49
S/46.67
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 65 A 40 mOhms 30 V 3 V 158 nC - 55 C + 150 C 446 W Enhancement Tube

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SUPERFET3 FAST 125MOHM TO-247-3 348En existencias
S/31.49
S/16.82
S/16.35
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 125 mOhms 30 V 4 V 44 nC - 55 C + 150 C 171 W Enhancement Tube

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SUPERFET3 FAST 165MOHM TO-220 1,431En existencias
S/20.86
S/10.94
S/9.96
S/9.30
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 19 A 165 mOhms 30 V 4 V 35 nC - 55 C + 150 C 142 W Enhancement Tube
onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SF3 650V EASY 99MOHM D2PAK 722En existencias
Cinta cortada
S/29.00
S/15.57
S/13.74
S/12.85
Envase tipo carrete
S/12.85
Min.: 1
Mult.: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 30 A 99 mOhms 30 V 4.5 V 61 nC - 55 C + 150 C 227 W Enhancement Reel, Cut Tape
onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Easy Drive 650V 10A 360 mOhm 2,518En existencias
Cinta cortada
S/20.75
S/10.78
S/9.85
S/8.68
S/8.21
Envase tipo carrete
S/8.21
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT PQFN-4 N-Channel 1 Channel 650 V 10 A 360 mOhms 30 V 4.5 V 18 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape, MouseReel
onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SF3 650V FRFET HF 82MOHM KELVIN SENSE TOLL 1,649En existencias
Cinta cortada
S/34.02
S/22.81
S/21.56
S/20.59
S/20.40
Envase tipo carrete
S/20.40
Min.: 1
Mult.: 1
: 2,000
Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 40 A 82 mOhms 30 V 5 V 79 nC - 55 C + 150 C 313 W Enhancement Reel, Cut Tape, MouseReel

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SUPERFET3 FAST 250MOHM DPAK 2,001En existencias
Cinta cortada
S/17.05
S/8.76
S/7.90
S/6.70
S/6.31
Envase tipo carrete
S/6.31
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 13 A 250 mOhms 30 V 4 V 24 nC - 55 C + 150 C 106 W Enhancement Reel, Cut Tape, MouseReel

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SF3 800V 360MOHM DPAK 1,978En existencias
Cinta cortada
S/17.20
S/8.80
S/7.98
S/6.73
S/6.34
Envase tipo carrete
S/6.34
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 13 A 360 mOhms 20 V 3.8 V 25.3 nC - 55 C + 150 C 96 W Enhancement Reel, Cut Tape, MouseReel

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SF3 FRFET HF VERSION 65MOHM TO-247 446En existencias
S/51.81
S/31.37
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 65 mOhms 30 V 5 V 98 nC - 55 C + 150 C 337 W Enhancement Tube

onsemi Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SUPERFET3 650V TO247 PKG 332En existencias
S/35.46
S/19.15
S/19.11
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 44 A 72 mOhms 30 V 2.5 V 82 nC - 55 C + 150 C 312 W Enhancement AEC-Q101 SuperFET III Tube