R8002ANJ & R8005ANJ & R8008ANJ Power MOSFETs

ROHM Semiconductor R8002ANJ and R8005ANJ and R8008ANJ Power MOSFETs feature low on-resistance and fast switching. The MOSFETs are suitable for switching applications. The devices feature low on-resistance, have a fast switching speed, and a gate-source voltage (VGSS) guaranteed to be ±30V.

Results: 3
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Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
ROHM Semiconductor MOSFETs TO263 800V 2A N-CH MOSFET
Datasheet
1,919In Stock
Cut Tape
S/14.44
S/9.46
S/6.58
S/5.37
Reel
S/5.25
S/5.02
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT TO-263S-3 N-Channel 1 Channel 800 V 2 A 4.3 Ohms 30 V 5 V 13 nC - 55 C + 150 C 62 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFETs TO263 800V 5A N-CH MOSFET
Datasheet
1,986In Stock
Cut Tape
S/17.75
S/11.72
S/8.29
S/7.12
Reel
S/6.77
S/6.66
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT TO-263-3 N-Channel 1 Channel 800 V 5 A 2.1 Ohms 30 V 5 V 20 nC - 55 C + 150 C 120 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFETs TO263 800V 8A N-CH MOSFET
Datasheet
826In Stock
Cut Tape
S/23.00
S/12.07
S/11.02
S/10.00
Reel
S/9.42
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT TO-263S-3 N-Channel 1 Channel 800 V 8 A 1.03 Ohms 30 V 5 V 38 nC - 55 C + 150 C 195 W Enhancement Reel, Cut Tape