Results: 11
Select Image Part # Mfr. Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1,590In Stock
1,000On Order
Cut Tape
S/ 150.41
S/ 122.73
S/ 108.45
S/ 107.82
Reel
S/ 101.24
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 189 A 7.7 mOhms - 7 V, + 20 V 5.1 V 195 nC - 55 C + 175 C 800 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 2,011In Stock
Cut Tape
S/ 108.13
S/ 74.70
S/ 74.50
S/ 70.42
Reel
S/ 65.71
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 144 A 12.2 mOhms - 7 V, + 20 V 5.1 V 124 nC - 55 C + 175 C 600 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 245In Stock
Cut Tape
S/ 69.33
S/ 52.82
S/ 44.02
S/ 39.24
Reel
S/ 36.63
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 87 A 21.6 mOhms - 7 V, + 20 V 5.1 V 71 nC - 55 C + 175 C 385 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1,603In Stock
Cut Tape
S/ 52.67
S/ 32.15
S/ 31.53
Reel
S/ 30.01
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 75 A 25.4 mOhms - 7 V, + 20 V 5.1 V 60 nC - 55 C + 175 C 335 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 502In Stock
1,000Expected 5/6/2027
Cut Tape
S/ 36.51
S/ 24.95
S/ 20.55
S/ 18.33
Reel
S/ 17.17
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 41 A 52.6 mOhms - 7 V, + 20 V 5.1 V 30 nC - 55 C + 175 C 205 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 3,605In Stock
Cut Tape
S/ 20.51
S/ 10.67
S/ 9.69
S/ 8.56
Reel
S/ 8.52
Min.: 1
Mult.: 1
Max.: 1,000
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 8.1 A 233.9 mOhms - 7 V, + 20 V 5.1 V 7.9 nC - 55 C + 175 C 80 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 79In Stock
1,000Expected 12/31/2026
Cut Tape
S/ 44.41
S/ 31.41
S/ 26.16
S/ 23.32
Reel
S/ 21.80
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 52 A 39.6 mOhms - 7 V, + 20 V 5.1 V 8.1 nC - 55 C + 175 C 250 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 227In Stock
2,000Expected 12/3/2026
Cut Tape
S/ 31.96
S/ 22.50
S/ 18.22
S/ 16.19
Reel
S/ 14.32
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 29 A 78.1 mOhms - 7 V, + 20 V 5.1 V 20.6 nC - 55 C + 175 C 158 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 206In Stock
4,000On Order
Cut Tape
S/ 25.15
S/ 16.47
S/ 12.14
S/ 10.78
Reel
S/ 9.54
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 14.9 A 181.4 mOhms - 7 V, + 20 V 5.1 V 9.7 nC - 55 C + 175 C 94 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
1,999Expected 11/19/2026
Cut Tape
S/ 79.10
S/ 59.09
S/ 51.11
S/ 48.38
Reel
S/ 45.19
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 107 A 17.1 mOhms - 7 V, + 20 V 5.1 V 89 nC - 55 C + 175 C 470 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
2,000Expected 12/3/2026
Cut Tape
S/ 27.79
S/ 18.61
S/ 14.95
S/ 13.27
Reel
S/ 11.76
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 21.2 A 115.7 mOhms - 7 V, + 20 V 5.1 V 14.4 nC - 55 C + 175 C 123 W Enhancement