SiC MOSFETs – Mouser Peru

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Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = +200°C), and a very fast and robust intrinsic body diode.

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Results: 18

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Part #

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

SCT012W90G3-4AG
STMicroelectronics
1: S/86.41
610In Stock

Mfr. Part #
SCT012W90G3-4AG

Mouser Part #
511-SCT012W90G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

Learn More

Datasheet

610In Stock

S/86.41

S/53.41

Min.: 1
Mult.: 1

Through Hole

HiP247-3

1 Channel

900 V

110 A

15.8 mOhms

- 10 V, + 22 V

3.1 V

138 nC

- 55 C

+ 200 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

SCT015W120G3-4AG
STMicroelectronics
1: S/100.31
528In Stock

Mfr. Part #
SCT015W120G3-4AG

Mouser Part #
511-SCT015W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

Learn More

Datasheet

528In Stock

S/100.31

S/64.58

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

1.2 kV

129 A

15 mOhms

- 18 V, + 18 V

4.2 V

167 nC

- 55 C

+ 200 C

673 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

SCT020W120G3-4AG
STMicroelectronics
1: S/78.75
256In Stock
600Expected 7/23/2027

Mfr. Part #
SCT020W120G3-4AG

Mouser Part #
511-SCT020W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

Learn More

Datasheet

256In Stock

600Expected 7/23/2027

S/78.75

S/47.41

Min.: 1
Mult.: 1

Through Hole

Hip247-4

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

+ 200 C

541 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

SCT025W120G3AG
STMicroelectronics
1: S/73.76
223In Stock
600Expected 3/12/2027

Mfr. Part #
SCT025W120G3AG

Mouser Part #
511-SCT025W120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

Learn More

Datasheet

223In Stock

600Expected 3/12/2027

S/73.76

S/45.89

S/43.05

Min.: 1
Mult.: 1

Through Hole

HiP247-3

1 Channel

1.2 kV

56 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

SCT040H120G3AG
STMicroelectronics
1: S/53.05
990In Stock

Mfr. Part #
SCT040H120G3AG

Mouser Part #
511-SCT040H120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

Learn More

Datasheet

990In Stock

Cut Tape

S/53.05

S/30.17

S/30.09

Reel

S/28.45

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

54 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

SCT025W120G3-4AG
STMicroelectronics
1: S/82.13
13In Stock
1,200On Order

Mfr. Part #
SCT025W120G3-4AG

Mouser Part #
511-SCT025W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Learn More

Datasheet

13In Stock

1,200On Order

S/82.13

S/56.67

S/51.73

S/47.57

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

1.2 kV

56 A

37 mOhms

- 18 V, + 18 V

4.2 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

SCT020HU120G3AG
STMicroelectronics
1: S/88.59
58In Stock
1,200Expected 2/19/2027
New Product

Mfr. Part #
SCT020HU120G3AG

Mouser Part #
511-SCT020HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

Learn More

Datasheet

58In Stock

1,200Expected 2/19/2027

Cut Tape

S/88.59

S/60.84

S/55.90

Reel

S/50.60

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

555 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

SCT040W120G3AG
STMicroelectronics
1: S/54.07
17In Stock
600Expected 5/14/2027

Mfr. Part #
SCT040W120G3AG

Mouser Part #
511-SCT040W120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Learn More

Datasheet

17In Stock

600Expected 5/14/2027

S/54.07

S/37.99

S/29.00

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

SCTW40N120G2VAG
STMicroelectronics
1: S/78.51
5In Stock
600Expected 2/12/2027

Mfr. Part #
SCTW40N120G2VAG

Mouser Part #
511-SCTW40N120G2VAG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

Learn More

Datasheet

5In Stock

600Expected 2/12/2027

S/78.51

S/42.04

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

1 Channel

1.2 kV

36 A

100 mOhms

- 10 V, + 22 V

4.9 V

61 nC

- 55 C

+ 200 C

278 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package

SCT011HU75G3AG
STMicroelectronics
1: S/106.93
1,200Expected 3/12/2027
New Product

Mfr. Part #
SCT011HU75G3AG

Mouser Part #
511-SCT011HU75G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package

Learn More

Datasheet

1,200Expected 3/12/2027

Cut Tape

S/106.93

S/82.13

S/73.76

Reel

S/66.80

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

750 V

110 A

15 mOhms

- 10 V, + 22 V

3.2 V

154 nC

- 55 C

+ 175 C

652 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

SCT016H120G3AG
STMicroelectronics
1: S/97.20
1,985On Order
New Product

Mfr. Part #
SCT016H120G3AG

Mouser Part #
511-SCT016H120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

Learn More

Datasheet

1,985On Order

Cut Tape

S/97.20

S/65.51

Reel

S/62.05

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

1.2 kV

112 A

22 mOhms

- 10 V, + 22 V

3 V

150 nC

- 55 C

+ 175 C

652 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

SCT025H120G3AG
STMicroelectronics
1: S/71.47
1,997Expected 2/26/2027

Mfr. Part #
SCT025H120G3AG

Mouser Part #
511-SCT025H120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

1,997Expected 2/26/2027

Cut Tape

S/71.47

S/44.26

S/43.83

Reel

S/41.88

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

1.2 kV

55 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 175 C

375 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

SCT012H90G3AG
STMicroelectronics
1: S/90.81
998Expected 1/29/2027

Mfr. Part #
SCT012H90G3AG

Mouser Part #
511-SCT012H90G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Learn More

Datasheet

998Expected 1/29/2027

Cut Tape

S/90.81

S/59.17

S/58.93

S/55.55

Reel

S/52.82

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

900 V

110 A

12 mOhms

- 18 V, + 18 V

4.2 V

138 nC

- 55 C

+ 175 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package

SCT040HU120G3AG
STMicroelectronics
1: S/57.41
1,200Expected 3/12/2027
New Product

Mfr. Part #
SCT040HU120G3AG

Mouser Part #
511-SCT040HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package

Learn More

Datasheet

1,200Expected 3/12/2027

Cut Tape

S/57.41

S/39.59

S/35.54

Reel

S/30.71

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

1.2 kV

40 A

72 mOhms

- 10 V, + 22 V

3 V

54 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

SCT040HU65G3AG
STMicroelectronics
1: S/53.17
592On Order

Mfr. Part #
SCT040HU65G3AG

Mouser Part #
511-SCT040HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

Learn More

Datasheet

592On Order

Cut Tape

S/53.17

S/40.52

S/33.75

Reel

S/30.09

S/28.45

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

H2PAK-2

1 Channel

650 V

7 A

40 mOhms

- 30 V, + 30 V

5 V

36 nC

- 55 C

+ 150 C

266 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055HU65G3AG
STMicroelectronics
1: S/52.67
1,800Expected 2/5/2027

Mfr. Part #
SCT055HU65G3AG

Mouser Part #
511-SCT055HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Learn More

Datasheet

1,800Expected 2/5/2027

Cut Tape

S/52.67

S/40.13

S/33.44

Reel

S/29.78

S/28.18

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

4.2 V

29 nC

- 55 C

+ 175 C

185 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package

SCT070HU120G3AG
STMicroelectronics
1: S/57.03
599Expected 11/11/2026

Mfr. Part #
SCT070HU120G3AG

Mouser Part #
511-SCT070HU120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package

Learn More

Datasheet

599Expected 11/11/2026

Cut Tape

S/57.03

S/39.20

S/34.53

Reel

S/31.14

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

37 nC

- 55 C

+ 175 C

223 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

SCT040W120G3-4
STMicroelectronics
1: S/50.25
100On Order

Mfr. Part #
SCT040W120G3-4

Mouser Part #
511-SCT040W120G3-4

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

Learn More

Datasheet

100On Order

S/50.25

S/33.71

S/29.62

S/25.38

Min.: 1
Mult.: 1

Through Hole

HiP247-4

1 Channel

1.2 kV

40 A

54 mOhms

- 10 V, + 22 V

3.1 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

Automotive-Grade Silicon Carbide Power MOSFETs

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