STH315N10F7 STripFET™ VII DeepGATE™ Power MOSFETs

STMicroelectronics STH315N10F7 STripFET™ VII DeepGATE™ Power MOSFETs are AEC-Q101 automotive-qualified N-channel Power MOSFETs that combine best-in-class on-state resistance with low internal capacitances and gate charge, enhancing both conduction and switching efficiency. STH315N10F7 MOSFETs also have high avalanche ruggedness to survive potentially damaging conditions. With a 100V rating, these STripFET VII DeepGATE MOSFETs provide an adequate safety margin to withstand typical over-voltage surges. STH315N10F7 STripFET VII DeepGATE MOSFETs are also well-suited for highly rugged performance in automotive and switching applications.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
STMicroelectronics MOSFETs Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET 957In Stock
4,000On Order
Cut Tape
S/21.06
S/13.97
S/10.47
S/8.87
Reel
S/8.84
S/8.29
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 180 A 2.3 mOhms 20 V 3.5 V 180 nC - 55 C + 175 C 315 W Enhancement AEC-Q101 STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET 1,029In Stock
3,324Expected 10/8/2026
Cut Tape
S/21.60
S/11.29
S/10.28
S/9.19
Reel
S/8.37
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT H2PAK-2 N-Channel 1 Channel 100 V 180 A 2.3 mOhms 20 V 3.5 V 180 nC - 55 C + 175 C 315 W Enhancement AEC-Q101 STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET Non-Stocked Lead-Time 22 Weeks
S/22.30
S/11.60
S/10.59
S/8.76
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 180 A 2.3 mOhms 20 V 3.5 V 180 nC - 55 C + 175 C 315 W Enhancement AEC-Q101 STripFET Tube