NVMFD6H846NL Dual N-Channel Power MOSFET

onsemi NVMFD6H846NL Dual N-Channel Power MOSFET is designed for compact and efficient designs with high thermal performance. This onsemi MOSFET features low RDS(on) to minimize conduction losses and low QG/capacitance to minimize driver losses. The NVMFD6H846NL MOSFET offers a small footprint with 5mm x 6mm dimensions. This MOSFET is AEC-Q101 Qualified and PPAP capable. Typical applications include reverse battery protection, power switches (high-side driver, low-side driver, and H-bridges), and switching power supplies.

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Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Packaging
onsemi MOSFETs T8 80V LL SO8FL DS
Datasheet
980In Stock
Cut Tape
S/11.99
S/5.96
S/5.18
S/4.32
S/3.89
Reel
S/3.89
Min.: 1
Mult.: 1
: 1,500
Si SMD/SMT SO-8FL-Dual-8 N-Channel 2 Channel 80 V 31 A 15 mOhms 20 V 2 V 17 nC - 55 C + 175 C 34 W Enhancement AEC-Q101 Reel, Cut Tape
onsemi MOSFETs T8 80V LL SO8FL DS
Datasheet
315In Stock
Cut Tape
S/9.73
S/4.75
S/4.20
S/3.19
S/2.79
Reel
S/2.71
Min.: 1
Mult.: 1
: 1,500
Si SO-8FL-Dual-8 Reel, Cut Tape