750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [RDS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (ID) and source current (IS) (TC=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.

Resultados: 23
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (PEN) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Estilo de montaje Paquete / Cubierta Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Calificación
ROHM Semiconductor MOSFETs de SiC TO263 750V 51A N-CH SIC 2,004En existencias
Cinta cortada
S/70.30
S/43.32
S/42.86
Envase tipo carrete
S/40.99
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor MOSFETs de SiC TO247 750V 105A N-CH SIC 450En existencias
S/149.47
S/100.89
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement
ROHM Semiconductor MOSFETs de SiC TO247 750V 56A N-CH SIC 625En existencias
S/79.48
S/50.02
S/49.20
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor MOSFETs de SiC TO247 750V 34A N-CH SIC 311En existencias
S/53.56
S/31.76
S/30.98
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor MOSFETs de SiC TO263 750V 31A N-CH SIC 1,946En existencias
Cinta cortada
S/48.03
S/27.09
S/26.66
S/26.00
Envase tipo carrete
S/25.07
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement
ROHM Semiconductor MOSFETs de SiC TO247 750V 105A N-CH SIC 641En existencias
S/110.47
S/84.08
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement
ROHM Semiconductor MOSFETs de SiC TO263 750V 98A N-CH SIC 279En existencias
1,000Se espera el 26/10/2026
Cinta cortada
S/123.59
S/88.79
S/88.75
Envase tipo carrete
S/84.08
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 750 V 98 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 267 W Enhancement
ROHM Semiconductor MOSFETs de SiC TOLL 750V 120A SIC 900En existencias
Cinta cortada
S/136.39
S/100.47
S/100.43
S/95.91
S/95.13
Envase tipo carrete
S/95.13
Min.: 1
Mult.: 1
: 2,000
SMD/SMT TOLL-9 1 Channel 750 V 120 A 4.8 V 170 nC + 175 C 405 W Enhancement
ROHM Semiconductor MOSFETs de SiC TOLL 750V 46A SIC 1,990En existencias
Cinta cortada
S/65.74
S/39.74
S/37.60
Envase tipo carrete
S/37.60
Min.: 1
Mult.: 1
: 2,000
SMD/SMT TOLL-9 1 Channel 750 V 46 A 4.8 V 72 nC + 175 C 164 W Enhancement
ROHM Semiconductor MOSFETs de SiC TOLL 750V 37A SIC 1,941En existencias
Cinta cortada
S/57.45
S/33.36
S/31.57
Envase tipo carrete
S/31.57
Min.: 1
Mult.: 1
: 2,000
SMD/SMT TOLL-9 1 Channel 750 V 37 A 4.8 V 63 nC + 175 C 133 W Enhancement
ROHM Semiconductor MOSFETs de SiC TOLL 750V 80A SIC 490En existencias
Cinta cortada
S/99.22
S/67.26
S/66.99
S/63.68
Envase tipo carrete
S/63.68
Min.: 1
Mult.: 1
: 2,000
SMD/SMT TOLL-9 1 Channel 750 V 80 A 4.8 V 123 nC + 175 C 277 W Enhancement
ROHM Semiconductor MOSFETs de SiC Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 439En existencias
S/55.70
S/33.83
S/30.13
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor MOSFETs de SiC Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 410En existencias
S/49.05
S/29.43
S/25.53
Min.: 1
Mult.: 1
Through Hole TO-247-4L 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor MOSFETs de SiC 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 1,000En existencias
Cinta cortada
S/48.70
S/33.86
S/26.94
Envase tipo carrete
S/25.30
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7LA 1 Channel 750 V 38 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 115 W Enhancement AEC-Q101
ROHM Semiconductor MOSFETs de SiC Discrete Semiconductors, SiC Power Devices, 750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 450En existencias
S/41.73
S/22.65
S/20.94
S/20.79
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 750 V 25 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor MOSFETs de SiC TOLL 750V 26A SIC 970En existencias
Cinta cortada
S/47.68
S/26.82
S/26.20
S/24.76
Envase tipo carrete
S/24.76
Min.: 1
Mult.: 1
: 2,000
SMD/SMT TOLL-9 1 Channel 750 V 26 A 4.8 V 48 nC + 175 C 100 W Enhancement
ROHM Semiconductor MOSFETs de SiC Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 440En existencias
S/34.72
S/20.36
S/17.71
Min.: 1
Mult.: 1
Through Hole TO-247-4L 1 Channel 750 V 25 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor MOSFETs de SiC 750V, 45mO, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET 1,000En existencias
Cinta cortada
S/35.58
S/24.29
S/17.91
S/17.83
Envase tipo carrete
S/16.74
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7LA 1 Channel 750 V 22 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 71 W Enhancement
ROHM Semiconductor MOSFETs de SiC TO263 750V 51A N-CH SIC 1,439En existencias
Cinta cortada
S/74.89
S/57.06
S/47.57
S/42.39
Envase tipo carrete
S/39.55
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor MOSFETs de SiC TOLL 750V 61A SIC 92En existencias
Cinta cortada
S/79.45
S/50.68
S/50.45
S/47.96
Envase tipo carrete
S/47.96
Min.: 1
Mult.: 1
: 2,000
SMD/SMT TOLL-9 1 Channel 750 V 61 A 4.8 V 94 nC + 175 C 214 W Enhancement
ROHM Semiconductor MOSFETs de SiC TO247 750V 56A N-CH SIC 121En existencias
S/81.00
S/49.20
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor MOSFETs de SiC TO247 750V 34A N-CH SIC 428En existencias
S/57.30
S/33.51
S/30.09
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor MOSFETs de SiC TO263 750V 31A N-CH SIC 23En existencias
1,000En pedido
Cinta cortada
S/47.92
S/27.56
S/26.74
S/25.22
Envase tipo carrete
S/23.86
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 750 V 31 A 45 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement