CSD25310Q2 20V P-Channel NexFET Power MOSFET

Texas Instruments CSD25310Q2 20V P-Channel NexFET Power MOSFET is a 19.9mΩ, –20V P-Channel MOSFET that is designed to deliver the lowest on-resistance and gate charge. This is done in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The CSD25310Q2's low on-resistance coupled with an extremely small footprint in a SON 2mm×2mm plastic package makes the device ideal for battery-operated space-constrained operations.

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Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Texas Instruments MOSFETs -20-V P channel Nex FET power MOSFET si A 595-CSD25310Q2
Datasheet
16,905In Stock
Cut Tape
S/7.08
S/3.37
S/2.62
Reel
S/2.62
S/2.25
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MouseReel Available
Min.: 1
Mult.: 1
: 250
Si SMD/SMT WSON-6 P-Channel 1 Channel 20 V 20 A 19.9 mOhms 8 V 1.1 V 4.7 nC - 55 C + 150 C 2.9 W Enhancement NexFET Reel, Cut Tape, MouseReel
Texas Instruments MOSFETs 20-V P-CH NexFET Pwr MOSFET
Datasheet
1,917In Stock
12,000Expected 10/23/2026
Cut Tape
S/2.69
S/1.21
S/1.07
S/0.81
Reel
S/0.615
View
MouseReel Available
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT WSON-6 P-Channel 1 Channel 20 V 20 A 23.9 mOhms 8 V 550 mV 3.6 nC - 55 C + 150 C 2.9 W Enhancement NexFET Reel, Cut Tape, MouseReel