IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [RDS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (ID) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (VDSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).

Results: 13
Select Image Part # Mfr. Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
IXYS SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L 900In Stock
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S/50.52
S/28.61
S/28.22
S/26.74
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S/26.74
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7L 1 Channel 650 V 111 A 33 mOhms - 5 V, + 20 V 4.5 V 125 nC - 55 C + 175 C 600 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO263 894In Stock
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S/30.40
S/20.59
S/15.03
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S/13.55
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: 800
SMD/SMT TO-263-7 1 Channel 1.2 kV 20 A 208 mOhms - 5 V, 20 V 4.5 V 29 nC - 55 C + 175 C 136 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO263-7L 870In Stock
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S/34.72
S/18.96
S/17.44
S/16.15
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S/16.15
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: 800
SMD/SMT TO-263-7 1 Channel 650 V 43 A 78 mOhms - 5 V, 20 V 4.5 V 64 nC - 55 C + 175 C 174 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO263-7L 900In Stock
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S/42.04
S/23.36
S/22.23
S/20.79
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S/20.79
Min.: 1
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: 800
SMD/SMT TO-263-7 1 Channel 650 V 60 A 53 mOhms - 5 V, 20 V 4.5 V 94.7 nC - 55 C + 175 C 249 W Enhancement
IXYS SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L 813In Stock
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S/46.40
S/30.56
S/27.60
S/25.11
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S/23.00
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: 800
SMD/SMT TO-263-7L 1 Channel 1.2 kV 65 A 53 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 417 W Enhancement
IXYS SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL 2,084In Stock
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S/50.52
S/28.61
S/28.22
S/26.39
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S/26.39
Min.: 1
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: 2,000
SMD/SMT TOLL-8 1 Channel 650 V 111 A 33 mOhms - 5 V, + 20 V 4.5 V 125 nC - 55 C + 175 C 600 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TOLL 2,095In Stock
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S/34.33
S/18.72
S/17.20
S/17.01
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S/16.11
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: 2,000
SMD/SMT TOLL-8 1 Channel 650 V 43 A 78 mOhms - 5 V, 20 V 4.5 V 64 nC - 55 C + 175 C 174 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TOLL 2,090In Stock
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S/41.53
S/23.08
S/21.88
S/20.71
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S/20.71
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: 2,000
SMD/SMT TTOLL-8 1 Channel 650 V 60 A 53 mOhms - 5 V, 20 V 4.5 V 94.7 nC - 55 C + 175 C 249 W Enhancement
IXYS SiC MOSFETs 650V 25mohm (100A a. 25C) SiC MOSFET in TO247-4L 520In Stock
S/51.46
S/29.19
S/27.05
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Through Hole TO-247-4L 1 Channel 650 V 99 A 33 mOhms - 5 V, + 20 V 4.5 V 125 nC - 55 C + 175 C 454 W Enhancement
IXYS SiC MOSFETs TO247 1200V N CH 20A 542In Stock
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S/28.96
S/15.53
S/12.69
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S/12.69
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: 450
Through Hole TO-247-4 1 Channel 1.2 kV 20 A 208 mOhms - 5 V, 20 V 4.5 V 29 nC - 55 C + 175 C 136 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO247-4L HV 550In Stock
S/35.27
S/19.27
S/16.70
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Through Hole TO-247-4 1 Channel 650 V 43 A 78 mOhms - 5 V, 20 V 4.5 V 64 nC - 55 C + 175 C 174 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO247-4L HV 550In Stock
S/42.35
S/29.19
S/21.21
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Through Hole TO-247-4 1 Channel 650 V 60 A 53 mOhms - 5 V, 20 V 4.5 V 94.7 nC - 55 C + 175 C 249 W Enhancement
IXYS SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L 537In Stock
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S/47.37
S/30.60
S/28.38
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S/24.76
S/23.67
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: 450
Through Hole TO-247-4L 1 Channel 1.2 kV 65 A 52 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 375 W Enhancement