DDB6U134N16RR IGBT Silicon Modules

Infineon Technologies DDB6U134N16RR IGBT Silicon Modules offer a 1.35V at 100A forward voltage and a 500W power dissipation. The devices operate at a -40°C to +150°C maximum temperature range. The Infineon DDB6U134N16RR IGBT Silicon Modules are available in a package of 45mm x 107.5mm x 20.5mm (W x L x H).

Results: 3
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Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
If - Forward Current
Configuration
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Technology
Packaging
Infineon Technologies Diode Modules LOW POWER ECONO
Datasheet
24In Stock
S/249.94
S/183.96
S/177.61
Min.: 1
Mult.: 1
Screw Mount 100 A Single 1.35 V - 40 C + 150 C Si Tray
Infineon Technologies Diode Modules LOW POWER ECONO
Datasheet
13In Stock
S/268.74
S/198.67
S/191.82
Min.: 1
Mult.: 1
Si Tray
Infineon Technologies Diode Modules LOW POWER ECONO
Datasheet
Non-Stocked Lead-Time 16 Weeks
S/209.69
S/188.40
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Min.: 15
Mult.: 15
Screw Mount 35 A 1.35 V - 40 C + 150 C Si Tray