30V Single N-Channel Power MOSFETs

Taiwan Semiconductor 30V Single N-Channel Power MOSFETs feature a low RDS(ON) (drain-source on-state resistance), which minimizes conductive losses. These devices also feature a low gate charge for fast switching. These N-Channel Power MOSFETs are ideal for battery power management, load switching, motor control, and DC-DC converter applications.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Packaging
Taiwan Semiconductor MOSFETs 30V, 90A, Single N-Channel Power MOSFET 2,489In Stock
Cut Tape
S/5.68
S/2.66
S/2.36
S/1.85
Reel
S/1.49
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT PDFN-56-8 N-Channel 1 Channel 30 V 90 A 5.2 mOhms 20 V 2.5 V 41 nC - 55 C + 175 C 83 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFETs 30V, 59A, Single N-Channel Power MOSFET 2,439In Stock
Cut Tape
S/4.75
S/2.20
S/1.95
S/1.51
Reel
S/1.21
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT PDFN-56-8 N-Channel 1 Channel 30 V 59 A 8 mOhms 20 V 2.5 V 20 nC - 55 C + 175 C 55.6 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFETs 30V, 194A, Single N-Channel Power MOSFET 826In Stock
Cut Tape
S/10.08
S/4.94
S/4.44
S/3.55
Reel
S/3.24
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT PDFN-56-8 N-Channel 1 Channel 30 V 194 A 1.8 mOhms 20 V 2.5 V 120 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel