UJ3C SiC FETs

onsemi UJ3C SiC FETs are Silicon Carbide (SiC) FETs are based on a unique cascode configuration and optimized for soft-switching designs. The UJ3C SiC FETs are ideal for upgrading an existing silicon-based device or starting a SiC-based design. These devices integrate a SiC JFET with a custom-designed Si-MOSFET to produce the ideal combination of normally-OFF operation, high-performance body diode, and easy gate drive of the MOSFET with the efficiency, speed, and high-temperature rating of the SiC JFET. As a result, existing systems can expect a performance increase with lower conduction and switching losses, enhanced thermal properties, and integrated gate ESD protection. 

Results: 11
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 Mfr.
Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
onsemi SiC MOSFETs 650V/80MOSICFETG3TO247-3
Datasheet
679In Stock
S/ 47.06
S/ 25.89
S/ 25.85
Min.: 1
Mult.: 1
Max.: 300
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/30MOSICFETG3TO220
Datasheet
425In Stock
1,000Expected 12/28/2026
S/ 103.50
S/ 82.87
S/ 71.66
S/ 64.23
Min.: 1
Mult.: 1
Max.: 1,000
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/30MOSICFETG3TO247-3
Datasheet
513In Stock
S/ 104.12
S/ 64.62
Min.: 1
Mult.: 1
Max.: 300
Through Hole TO-247-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/40MOSICFETG3TO24
Datasheet
381In Stock
S/ 142.70
S/ 106.11
S/ 100.66
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/70MOSICFETG3TO24
Datasheet
590In Stock
S/ 80.34
S/ 51.19
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 34.5 A 90 mOhms - 25 V, + 25 V 6 V 46 nC - 55 C + 175 C 254.2 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/70MOSICFETG3TO24
Datasheet
1,202In Stock
S/ 81.86
S/ 49.86
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-3 1 Channel 1.2 kV 34.5 A 90 mOhms - 12 V, + 12 V 6 V 46 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/80MOSICFETG3TO24
Datasheet
381In Stock
S/ 82.44
S/ 50.29
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 1200V/150MOSICFETG3TO2
Datasheet
348In Stock
S/ 54.14
S/ 41.26
S/ 34.37
S/ 30.63
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-3 1 Channel 1.2 kV 18.4 A 180 mOhms - 25 V, + 25 V 3.5 V 30 nC - 55 C + 175 C 166.7 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO220-3
Datasheet
27In Stock
2,000Expected 1/22/2027
S/ 43.05
S/ 30.01
Min.: 1
Mult.: 1
Max.: 1,000
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO263-3
Datasheet
160In Stock
Cut Tape
S/ 44.65
S/ 32.31
S/ 26.90
S/ 23.98
Reel
S/ 22.42
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/30MOSICFETG3TO263-3
Datasheet
79In Stock
Cut Tape
S/ 101.48
S/ 81.28
View
Reel
S/ 66.99
MouseReel Available
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 66 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 250 W Enhancement AEC-Q101 SiC FET