TRSx65H SiC Schottky Barrier Diodes

Toshiba TRSx65H Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are 650V devices based on third-generation technology utilizing Schottky metal. These components optimize the junction barrier Schottky (JBS) structure of the second-generation products, lowering the electric field at the Schottky interface and reducing leakage current, delivering enhanced efficiency. TRSx65H achieves a 17% lower forward voltage (1.2V typical) and improves trade-offs between the forward voltage and the total capacitive charge (17nC typical) than 2nd-Gen devices. With an enhanced forward voltage and reverse current ratio, a typical 1.1µA insulation resistance is achieved. Other features include forward DC current of up to 12A and square-wave non-repetitive surge currents of up to 640A.

Results: 12
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Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Packaging
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 8A DFN8x8
Datasheet
2,134In Stock
Cut Tape
S/12.49
S/6.73
S/5.53
S/5.22
Reel
S/4.05
S/3.93
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 8 A 650 V 1.2 V 410 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 4A DFN8x8
Datasheet
6,822In Stock
Cut Tape
S/9.07
S/4.40
S/3.97
S/3.80
Reel
S/3.80
S/2.63
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 4 A 650 V 1.2 V 230 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 6A DFN8x8
Datasheet
4,799In Stock
Cut Tape
S/10.74
S/5.29
S/4.75
S/4.40
Reel
S/4.40
S/3.31
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 6 A 650 V 1.2 V 310 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 10A DFN8x8
Datasheet
1,933In Stock
Cut Tape
S/13.66
S/7.67
S/6.27
S/6.07
Reel
S/4.55
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 10 A 650 V 1.2 V 510 A 2 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 3A TO-220-2L
Datasheet
1In Stock
S/9.89
S/5.76
S/3.57
S/3.29
Min.: 1
Mult.: 1
Through Hole TO-220-2L 3 A 650 V 1.2 V 170 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 12A DFN8x8
Datasheet
1,298In Stock
Cut Tape
S/14.87
S/8.68
S/7.08
S/6.89
Reel
S/6.89
S/5.18
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 12 A 650 V 1.2 V 640 A 2.4 uA Reel, Cut Tape
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 10A TO-220-2L
Datasheet
50In Stock
S/13.55
S/6.81
S/6.54
S/4.94
View
Min.: 1
Mult.: 1
Through Hole TO-220-2L 10 A 650 V 1.2 V 510 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 12A TO-220-2L
Datasheet
63In Stock
150Expected 10/16/2026
S/14.83
S/8.99
S/7.47
Min.: 1
Mult.: 1
Through Hole TO-220-2L 12 A 650 V 1.2 V 640 A 2.4 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 4A TO-220-2L
Datasheet
208In Stock
S/9.07
S/4.40
S/4.36
S/3.77
Min.: 1
Mult.: 1
Through Hole TO-220-2L 4 A 650 V 1.2 V 230 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 6A TO-220-2L
Datasheet
127In Stock
S/10.70
S/5.25
S/5.22
S/4.75
Min.: 1
Mult.: 1
Through Hole TO-220-2L 6 A 650 V 1.2 V 310 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 8A TO-220-2L
Datasheet
21In Stock
S/12.88
S/6.38
S/5.72
S/5.68
Min.: 1
Mult.: 1
Through Hole TO-220-2L 8 A 650 V 1.2 V 410 A 2 uA Tube
Toshiba SiC Schottky Diodes G3 SiC-SBD 650V 2A TO-220-2L
Datasheet
172On Order
S/8.60
S/4.40
S/3.13
S/2.85
Min.: 1
Mult.: 1
Through Hole TO-220-2L 2 A 650 V 1.2 V 120 A 2 uA Tube