UF3C SiC FETs in D2-PAK Package

onsemi UF3C SiC FETs in D2-PAK-3L and D2-PAK-7L surface-mount packages are based on a unique cascode circuit configuration and feature excellent reverse recovery. In the cascode circuit configuration, a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. These onsemi SiC FETs offer low body diode, low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. These D2-PAK SiC FET devices are ESD protected and provide package creepage and clearance distance of >6.1mm. The standard gate-drive characteristics of the FETs are drop-in replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction. They are available in 1200V and 650V drain-source breakdown voltage variants and are ideal for use in any controlled environment such as telecom and server power, industrial power supplies, motor drives, and induction heating.

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Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
onsemi SiC MOSFETs 1700V/400MOSICFETG3TO263-7
Datasheet
685In Stock
800Expected 12/21/2026
Cut Tape
S/ 45.31
S/ 32.04
S/ 23.78
S/ 22.50
Reel
S/ 22.50
MouseReel Available
Min.: 1
Mult.: 1
Max.: 800
: 800
SMD/SMT D2PAK-7 1 Channel 1.7 kV 7.6 A 410 mOhms - 25 V, + 25 V 6 V 23.1 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/150MOSICFETG3TO2
Datasheet
355In Stock
Cut Tape
S/ 49.71
S/ 28.53
S/ 26.27
S/ 24.87
Reel
S/ 24.87
MouseReel Available
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 17 A 150 mOhms - 25 V, + 25 V 4.4 V 25.7 nC - 55 C + 175 C 136 W Enhancement SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO263-3
Datasheet
1,252In Stock
Cut Tape
S/ 45.85
S/ 26.43
S/ 24.02
S/ 22.73
Reel
S/ 22.73
MouseReel Available
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 650V/80MOSICFETG3TO263-7
Datasheet
199In Stock
Cut Tape
S/ 52.47
S/ 30.48
S/ 28.42
S/ 26.90
Reel
S/ 26.90
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 650 V 27 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 136.4 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/400MOSICFETG3TO263-7
Datasheet
718In Stock
800Expected 1/8/2027
Cut Tape
S/ 36.01
S/ 19.73
S/ 18.14
S/ 17.13
Reel
S/ 17.13
MouseReel Available
Min.: 1
Mult.: 1
Max.: 800
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 5.9 A 410 mOhms - 25 V, + 25 V 6 V 22.5 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/80MOSICFETG3TO26
Datasheet
601In Stock
Cut Tape
S/ 74.85
S/ 46.94
S/ 44.45
Reel
S/ 44.45
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi SiC MOSFETs 650V/30MOSICFETG3TO263-3
Datasheet
Non-Stocked Lead-Time 52 Weeks
Cut Tape
S/ 98.36
S/ 66.52
Reel
S/ 66.52
MouseReel Available
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 65 A 27 mOhms - 25 V, + 25 V 4 V 51 nC - 25 C + 175 C 242 W Enhancement AEC-Q101 SiC FET