Automotive U-MOSX-H MOSFETs

Toshiba Automotive U-MOSX-H MOSFETs are AEC-Q101 qualified with low drain-source on-resistance. These devices feature a low leakage current of IDSS = 10µA (max) (VDS = 100V). The Toshiba Automotive U-MOSX-H MOSFETs are ideal for automotive, switching voltage, regulators, DC-DC converters, and motor drivers.

Results: 4
Select Image Part # Mfr. Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Packaging
Toshiba MOSFETs 375W 1MHz Automotive; AEC-Q101
1,202In Stock
Cut Tape
S/20.12
S/10.43
S/9.50
S/8.37
Reel
S/7.79
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT TO-220SM-3 N-Channel 1 Channel 100 V 160 A 1.92 mOhms 20 V 3.5 V 184 nC + 175 C 375 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR SOP Advance(WF) PD=132W F=1MHZ 3,500In Stock
Cut Tape
S/10.12
S/4.98
S/4.48
S/3.57
Reel
S/2.78
Min.: 1
Mult.: 1
: 5,000
Si SMD/SMT SOP-8 N-Channel 1 Channel 80 V 80 A 5.7 mOhms 20 V 3.5 V 63 nC + 175 C 132 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs POWER MOSFET TRANSISTOR SOP-ADVANCE(E) PD=250W F=1MHZ 1,252In Stock
5,000Expected 3/5/2027
Cut Tape
S/12.81
S/6.42
S/5.76
S/4.67
Reel
S/4.28
Min.: 1
Mult.: 1
: 5,000
Si SMD/SMT SOP-8 N-Channel 1 Channel 80 V 238 A 1.9 mOhms 20 V 3.5 V 108 nC + 175 C 250 W Enhancement Reel, Cut Tape
Toshiba MOSFETs 80V 2.55mOhm N-ch MOSFET AEC-Q SOP Advance(WF)
5,000Expected 11/16/2026
Cut Tape
S/11.72
S/5.80
S/5.25
S/4.24
Reel
S/3.32
Min.: 1
Mult.: 1
: 5,000
Si SMD/SMT SOP-8 N-Channel 1 Channel 80 V 120 A 2.55 mOhms 20 V 3.5 V 95 nC + 175 C 170 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel