TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (QC), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.

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Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Vr - Reverse Voltage
Packaging
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 15A RDL SIC SKY
Datasheet
2,550In Stock
S/50.91
S/28.80
S/28.38
S/28.18
S/26.66
Min.: 1
Mult.: 1
Through Hole TO-220ACG-2 Single 15 A 1.2 kV 1.6 V 62 A 300 uA + 175 C 1.2 kV Tube
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 5A RDL SIC SKY
Datasheet
1,277In Stock
S/27.60
S/14.71
S/13.47
S/11.87
Min.: 1
Mult.: 1
Through Hole TO-220ACG-2 Single 5 A 1.2 kV 1.6 V 23 A 100 uA + 175 C 1.2 kV Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 15A, 2nd Gen
Datasheet
6,315In Stock
S/31.10
S/16.93
S/15.53
S/14.09
Min.: 1
Mult.: 1
Through Hole TO-220ACG-2 Single 15 A 650 V 1.55 V 52 A 300 uA + 175 C 650 V Tube
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 20A RDL SIC SKY
Datasheet
891In Stock
S/61.50
S/35.50
S/34.10
Min.: 1
Mult.: 1
Through Hole TO-220ACG-2 Single 20 A 1.2 kV 1.6 V 79 A 400 uA + 175 C 1.2 kV Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 10A, 2nd Gen
Datasheet
755In Stock
S/25.65
S/13.58
S/12.42
S/10.78
Min.: 1
Mult.: 1
Through Hole TO-220ACG-2 Single 10 A 650 V 1.55 V 38 A 200 uA + 175 C 650 V Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 8A, 2nd Gen
Datasheet
1,674In Stock
S/23.32
S/12.26
S/11.17
S/9.46
Min.: 1
Mult.: 1
Through Hole TO-220ACG-2 Single 8 A 650 V 1.55 V 30 A 160 uA + 175 C 650 V Tube
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 10A RDL SIC SKY
Datasheet
455In Stock
S/39.51
S/21.80
S/20.12
S/19.11
Min.: 1
Mult.: 1
Through Hole TO-220ACG-2 Single 10 A 1.2 kV 1.6 V 42 A 200 uA + 175 C 1.2 kV Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 6A, 2nd Gen
Datasheet
Non-Stocked Lead-Time 21 Weeks
Through Hole TO-220ACG-2 Single 6 A 650 V 1.55 V 23 A 120 uA + 175 C 650 V Tube
ROHM Semiconductor SiC Schottky Diodes RECT 650V 12A SM SIC SKY
Datasheet
Non-Stocked Lead-Time 21 Weeks
Through Hole TO-220ACG-2 Single 12 A 650 V 1.55 V 43 A 240 uA + 175 C 650 V Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 20A, 2nd Gen
Datasheet
Non-Stocked Lead-Time 21 Weeks
Through Hole TO-220ACG-2 Single 20 A 650 V 1.55 V 68 A 400 uA + 175 C 650 V Tube