950V CoolMOS™ PFD7 SJ MOSFETs

Infineon Technologies 950V CoolMOS™ PFD7 SJ MOSFETs offer super junction (SJ) technologies. The SJ technology is ideal for lighting and industrial SMPS applications by incorporating best-in-class performance with state-of-the-art ease of use. The PFDJ provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge (Qrr).

Results: 10
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
1,835In Stock
Cut Tape
S/ 16.11
S/ 8.21
S/ 7.43
S/ 6.19
Reel
S/ 5.84
MouseReel Available
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 950 V 17.5 A 310 mOhms 30 V 3.5 V 61 nC - 55 C + 150 C 125 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
712In Stock
S/ 13.66
S/ 6.85
S/ 6.19
S/ 4.98
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 950 V 7.2 A 450 mOhms 30 V 3.5 V 43 nC - 55 C + 150 C 30 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
782In Stock
S/ 58.66
S/ 33.01
S/ 32.42
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 74.7 A 60 mOhms 30 V 3.5 V 315 nC - 55 C + 150 C 446 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
613In Stock
S/ 27.60
S/ 15.61
S/ 14.36
S/ 13.27
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 36.5 A 130 mOhms 20 V 2.5 V 141 nC - 55 C + 150 C 227 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
1,189In Stock
2,000Expected 1/28/2027
Cut Tape
S/ 29.35
S/ 15.76
S/ 14.44
S/ 13.82
Reel
S/ 13.04
MouseReel Available
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT TO-263-3 N-Channel 1 Channel 950 V 36.5 A 130 mOhms 20 V 2.5 V 141 nC - 55 C + 150 C 227 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
1,132In Stock
Cut Tape
S/ 14.36
S/ 7.24
S/ 6.54
S/ 5.33
Reel
S/ 4.98
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 950 V 13.3 A 450 mOhms 30 V 3.5 V 43 nC - 55 C + 150 C 104 W Enhancement Reel, Cut Tape


Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
3,695In Stock
S/ 16.23
S/ 8.06
S/ 7.32
S/ 6.07
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 17.5 A 310 mOhms 30 V 3.5 V 61 nC - 55 C + 150 C 125 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
59In Stock
500Expected 12/1/2026
S/ 29.31
S/ 15.73
S/ 14.40
S/ 13.04
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 950 V 13.9 A 130 mOhms 30 V 3.5 V 141 nC - 55 C + 150 C 33 W Enhancement Tube
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
644In Stock
Cut Tape
S/ 12.77
S/ 6.38
S/ 5.76
S/ 4.67
S/ 4.59
Reel
S/ 4.24
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 13.3 A 450 mOhms 30 V 3.5 V 43 nC - 55 C + 150 C 104 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
379Expected 11/3/2026
S/ 16.11
S/ 8.21
S/ 7.43
S/ 6.03
S/ 5.96
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 950 V 8.7 A 310 mOhms 30 V 3.5 V 61 nC - 55 C + 155 C 31 W Enhancement Tube