Results: 7
Select Image Part # Mfr. Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Infineon Technologies SiC MOSFETs SIC_DISCRETE 712In Stock
S/ 85.48
S/ 63.56
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 52 A 59 mOhms - 7 V, + 20 V 5.7 V 57 nC - 55 C + 175 C 228 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1,701In Stock
S/ 56.91
S/ 34.22
S/ 33.79
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 299In Stock
S/ 40.52
S/ 23.32
S/ 21.60
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
24,949On Order
Cut Tape
S/ 23.55
S/ 15.41
S/ 11.52
S/ 9.65
Reel
S/ 8.37
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.7 kV 5.2 A 1 Ohms - 10 V, + 20 V 4.5 V 5 nC - 55 C + 175 C 68 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
1,660On Order
S/ 72.17
S/ 54.96
S/ 45.81
S/ 40.79
S/ 38.11
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
978On Order
S/ 32.23
S/ 19.89
S/ 18.37
S/ 14.60
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 3.5 V 13 nC - 55 C + 175 C 94 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET Non-Stocked Lead-Time 52 Weeks
S/ 34.10
S/ 20.05
S/ 16.62
S/ 16.54
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 28 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC