TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [RDS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.

Results: 20
Select Image Part # Mfr. Description Datasheet Availability Pricing (PEN) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ 50In Stock
S/ 16.82
S/ 11.02
S/ 8.21
S/ 6.89
Min.: 1
Mult.: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 20 A 125 mOhms 30 V 4 V 28 nC + 150 C 40 W Enhancement Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR TOLL PD=230W F=1MHZ 2,000In Stock
Cut Tape
S/ 30.52
S/ 20.40
S/ 16.39
S/ 14.56
S/ 12.92
Reel
S/ 12.92
Min.: 1
Mult.: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 650 V 29 A 95 mOhms 30 V 4.5 V 50 nC + 150 C 230 W Enhancement Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR TOLL PD=176W F=1MHZ 1,961In Stock
Cut Tape
S/ 19.58
S/ 12.85
S/ 9.58
S/ 8.02
S/ 7.43
Reel
S/ 6.97
Min.: 1
Mult.: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 25 A 99 mOhms 30 V 4 V 36 nC + 150 C 176 W Enhancement Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-247 PD=242W F=1MHZ 53In Stock
S/ 30.83
S/ 20.63
S/ 16.58
S/ 14.75
S/ 13.08
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 63 mOhms 30 V 4 V 56 nC + 150 C 242 W Enhancement Tube
Toshiba MOSFETs 600V Silicon N-Channel MOS (DTMOS) MOSFET 1,960In Stock
Cut Tape
S/ 22.97
S/ 15.03
S/ 11.05
S/ 9.85
S/ 8.72
Reel
S/ 8.72
Min.: 1
Mult.: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 30 A 80 mOhms 30 V 4 V 43 nC + 150 C 211 W Enhancement Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR TOLL PD=150W F=1MHZ 1,986In Stock
Cut Tape
S/ 16.85
S/ 11.02
S/ 8.21
S/ 6.89
S/ 6.38
Reel
S/ 5.99
Min.: 1
Mult.: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 20 A 125 mOhms 30 V 4 V 28 nC + 150 C 150 W Enhancement Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR TOLL PD=130W F=1MHZ 1,974In Stock
Cut Tape
S/ 15.06
S/ 9.85
S/ 7.16
S/ 5.99
S/ 5.57
Reel
S/ 5.22
Min.: 1
Mult.: 1
: 2,000
Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 17 A 155 mOhms 30 V 4 V 24 nC + 150 C 130 W Enhancement Reel, Cut Tape
Toshiba MOSFETs TO220 150V 2.2A N-CH 750In Stock
S/ 25.30
S/ 13.86
S/ 12.69
S/ 11.91
S/ 10.59
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 120 A 4.9 mOhms 20 V 4.5 V 96 nC - 55 C + 175 C 300 W Enhancement Tube
Toshiba MOSFETs TO220 150V 2.2A N-CH 335In Stock
S/ 21.88
S/ 12.77
Min.: 1
Mult.: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 76 A 5 mOhms 20 V 4.5 V 96 nC - 55 C + 175 C 53 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.4A N-CH 294In Stock
S/ 17.28
S/ 8.84
S/ 7.98
S/ 6.42
Min.: 1
Mult.: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 57 A 7.4 mOhms 20 V 4.5 V 66 nC - 55 C + 175 C 46 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.1A N-CH 187In Stock
S/ 14.60
S/ 9.50
S/ 6.66
S/ 5.57
Min.: 1
Mult.: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 49 A 9.7 mOhms 20 V 4.5 V 50 nC - 55 C + 175 C 45 W Enhancement Tube
Toshiba MOSFETs TO247 650V 1.69A N-CH 85In Stock
60Expected 12/2/2026
S/ 40.01
S/ 21.64
S/ 19.97
S/ 19.70
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 37 A 68 mOhms 30 V 4.5 V 68 nC - 55 C + 150 C 270 W Enhancement Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ 143In Stock
S/ 15.06
S/ 9.85
S/ 7.16
S/ 5.99
Min.: 1
Mult.: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 17 A 155 mOhms 30 V 4 V 24 nC + 150 C 40 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.4A N-CH 350In Stock
S/ 17.09
S/ 8.76
S/ 7.90
S/ 6.46
S/ 6.31
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 84 A 7.2 mOhms 20 V 4.5 V 66 nC - 55 C + 175 C 230 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.1A N-CH 224In Stock
S/ 15.18
S/ 7.79
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 52 A 9.6 mOhms 20 V 4.5 V 50 nC - 55 C + 175 C 200 W Enhancement Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ 9In Stock
100Expected 1/22/2027
S/ 26.16
S/ 13.66
S/ 12.73
Min.: 1
Mult.: 1
Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 30 A 80 mOhms 30 V 4 V 43 nC + 150 C 45 W Enhancement Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-247 PD=176W F=1MHZ 20In Stock
S/ 23.78
S/ 15.57
S/ 11.48
S/ 10.20
S/ 9.03
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 99 mOhms 30 V 36 nC + 150 C 176 W Enhancement Tube
Toshiba MOSFETs Power MOSFET N-Channel 8In Stock
S/ 33.59
S/ 18.26
S/ 16.74
S/ 15.61
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 80 mOhms 30 V 3 V 115 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube

Toshiba MOSFETs MOSFET NChtrr130ns 0.08ohm DTMOS 9In Stock
S/ 37.21
S/ 25.92
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 80 mOhms 30 V 4.5 V 115 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR DFN 8x8 PD=240W F=1MHZ Non-Stocked Lead-Time 16 Weeks
Reel
S/ 10.28
Min.: 5,000
Mult.: 5,000
: 5,000
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 27.6 A 140 mOhms 30 V 3 V 90 nC - 55 C + 150 C 240 W Enhancement DTMOSIV Reel