1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits, including high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, and low capacitance and operate at -55°C to +175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, onboard chargers (OBCs), motor control, industrial power supplies, and server power supplies.

Resultados: 26
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (PEN) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Estilo de montaje Paquete / Cubierta Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Calificación Nombre comercial

onsemi MOSFETs de SiC SIC MOS TO247-4L 40MOHM 1200V 1,359En existencias
S/82.33
S/58.04
Min.: 1
Mult.: 1
Máx.: 450
Through Hole TO-247-4 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC

onsemi MOSFETs de SiC SIC MOS TO247-3L 160MOHM 1200V 2,374En existencias
S/52.74
S/29.39
S/28.26
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC

onsemi MOSFETs de SiC 20MW 1200V 805En existencias
S/203.81
S/156.71
Min.: 1
Mult.: 1
Máx.: 450
Through Hole TO-247-3 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement AEC-Q101 EliteSiC
onsemi MOSFETs de SiC SIC MOS D2PAK-7L 40MOHM 1200V 947En existencias
Cinta cortada
S/82.05
S/61.66
S/58.43
S/58.35
Envase tipo carrete
S/58.35
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 357 W Enhancement EliteSiC
onsemi MOSFETs de SiC SIC MOS D2PAK-7L 80MOHM 1200V 1,930En existencias
Cinta cortada
S/47.25
S/26.55
S/25.89
S/24.48
Envase tipo carrete
S/24.48
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement AEC-Q101 EliteSiC

onsemi MOSFETs de SiC SIC MOS TO247-3L 80MOHM 1200V 1,133En existencias
S/53.87
S/30.05
S/29.93
Min.: 1
Mult.: 1
Máx.: 450
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 178 W Enhancement EliteSiC

onsemi MOSFETs de SiC SIC MOS TO247-4L 80MOHM 1200V 660En existencias
S/49.55
S/27.40
S/27.36
S/25.73
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 29 A 80 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC
onsemi MOSFETs de SiC SIC MOS D2PAK-7L 160MOHM 1200V 1,830En existencias
Cinta cortada
S/36.75
S/21.49
S/20.09
S/19.00
Envase tipo carrete
S/19.00
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement EliteSiC

onsemi MOSFETs de SiC SIC MOS 80MW 1200 V 80 mOhms 44A 1,182En existencias
S/65.63
S/45.70
S/41.96
S/39.70
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 178 W Enhancement AEC-Q101 EliteSiC

onsemi MOSFETs de SiC SIC MOS TO247-3L 40MOHM 1200V 205En existencias
S/107.24
S/70.30
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi MOSFETs de SiC SIC MOS TO247-4L 20MOHM 1200V 266En existencias
S/187.70
S/159.67
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 102 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC

onsemi MOSFETs de SiC SIC MOS TO247-4L 1200V 40MOHM AUTO PART 224En existencias
S/110.51
S/71.97
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC

onsemi MOSFETs de SiC SIC MOS TO247-4L 1200V 160MOHM AUTO PART 181En existencias
S/55.47
S/29.70
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC
onsemi MOSFETs de SiC SIC MOS D2PAK-7L 40MOHM 1200V 53En existencias
Cinta cortada
S/113.66
S/85.25
S/78.71
S/70.57
Envase tipo carrete
S/70.57
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 357 W Enhancement EliteSiC
onsemi MOSFETs de SiC SIC MOS 20MW 1200V 2,160En existencias
Cinta cortada
S/151.65
S/114.71
S/114.63
S/108.60
Envase tipo carrete
S/108.60
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 98 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 468 W Enhancement EliteSiC

onsemi MOSFETs de SiC 20MW 1200V 755En existencias
S/150.45
S/106.07
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement EliteSiC
onsemi MOSFETs de SiC SIC MOS D2PAK-7L 80MOHM 1200V 426En existencias
Cinta cortada
S/53.21
S/31.68
S/29.97
Envase tipo carrete
S/29.97
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement EliteSiC

onsemi MOSFETs de SiC SIC MOS TO247-4L 20MOHM 1200V 187En existencias
S/133.67
S/106.58
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 102 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC

onsemi MOSFETs de SiC SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART 1,733En existencias
S/29.51
S/20.59
S/19.66
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC

onsemi MOSFETs de SiC SIC MOS TO247-3L 40MOHM 1200V 363En existencias
450Se espera el 10/11/2026
S/90.85
S/57.26
Min.: 1
Mult.: 1
Máx.: 450
Through Hole TO-247-3 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi MOSFETs de SiC SIC MOS TO247-3L 160MOHM 1200V 477En existencias
450Se espera el 18/06/2027
S/39.12
S/21.45
S/19.77
Min.: 1
Mult.: 1
Máx.: 450
Through Hole TO-247-3 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC
onsemi MOSFETs de SiC SIC MOS D2PAK-7L 20MOHM 1 84En existencias
Cinta cortada
S/215.57
S/174.93
S/156.28
Envase tipo carrete
S/156.28
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 98 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 468 W Enhancement AEC-Q101 EliteSiC
onsemi MOSFETs de SiC SIC MOS D2PAK-7L 160MOHM 1200V 190En existencias
1,600En pedido
Cinta cortada
S/50.95
S/34.14
S/30.28
S/26.82
Envase tipo carrete
S/26.82
Min.: 1
Mult.: 1
Máx.: 800
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 EliteSiC

onsemi MOSFETs de SiC SIC MOS TO247-4L 80MOHM 1200V 183En existencias
S/50.87
S/28.22
S/26.98
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 29 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi MOSFETs de SiC SIC MOSFET 900V TO247-4L 60MOHM Plazo de entrega no en existencias 52 Semanas
S/47.37
Min.: 450
Mult.: 450
Through Hole TO-247-4 1 Channel 900 V 46 A 84 mOhms - 10 V, + 19 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement EliteSiC