STDRIVEG612 600V Half-Bridge Gate Driver

STMicroelectronics STDRIVEG612 600V High-Speed Half-Bridge Gate Driver is optimized for 5V driving enhanced-mode GaN HEMTs. The high-side driver section is designed to support a voltage rail of up to 600V and can be easily supplied by the integrated bootstrap diode. High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG612 optimized for driving high-speed GaN.

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Cantidad RoHS
STMicroelectronics Controladores de puertas High voltage and high-speed half-bridge gate driver for GaN power switches
Hoja de datos
1,000Se espera el 25/02/2026
Min.: 1
Mult.: 1
Carrete: 3,000
STMicroelectronics STDRIVEG612Q
STMicroelectronics STMicroelectronics High voltage and high-speed half-bridge gate driver for GaN power switches
Hoja de datos
No en existencias
Min.: 4,900
Mult.: 4,900