QPD1004A GaN Input Matched Transistors

Qorvo QPD1004A GaN Input Matched Transistors are 25W (P_3dB), 50Ω input matched discrete Gallium Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistor (HEMT) which operate from 30MHz to 1400MHz on a 50V supply rail. An integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The Qorvo QPD1004A transistors are ideally suited forbase stations, radar, and communications applications, and support both CW and pulsed modes of operation. These devices are housed in an industry-standard 6mm x 5mm x 0.85mm surface-mount DFN package.