TJ30S06M3L(T6L1,NQ
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757-TJ30S06M3LT6L1NQ
TJ30S06M3L(T6L1,NQ
Fabricante:
Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -30A -60V 68W 3950pF 0.0218
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -30A -60V 68W 3950pF 0.0218
Hoja de datos:
En existencias: 5,662
-
Existencias:
-
5,662 Se puede enviar inmediatamenteSe ha producido un error inesperado. Vuelva a intentarlo más tarde.
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Plazo de entrega de fábrica:
-
20 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Precio (PEN)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| Cinta cortada / MouseReel™ † | ||
| S/8.84 | S/8.84 | |
| S/5.68 | S/56.80 | |
| S/3.86 | S/386.00 | |
| S/3.08 | S/1,540.00 | |
| S/2.90 | S/2,900.00 | |
| Envase tipo carrete completo (pedir en múltiplos de 2000) | ||
| S/2.54 | S/5,080.00 | |
| S/2.53 | S/10,120.00 | |
| S/2.44 | S/24,400.00 | |
† S/23.00 Se agregará y calculará la tarifa de MouseReel™ en su carrito de compras. Ningún artículo de MouseReel™ se puede cancelar ni devolver.
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Hoja de datos
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
PCN
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- TARIC:
- 8542399000
- MXHTS:
- 8542399901
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2