Model BID Insulated Gate Bipolar Transistors

Bourns Model BID Insulated Gate Bipolar Transistors (IGBTs) combine technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a lower Collector-Emitter Saturation Voltage and fewer switching losses. The IGBTs feature a -55°C to +150°C operating temperature range and are available in TO-252, TO-247, and TO-247N packages. These thermally efficient components provide a lower thermal resistance making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.

Resultados: 8
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Descripción Hoja de datos Disponibilidad Precio: (PEN) Filtre los resultados en la tabla por precio unitario en función de su cantidad.
Cantidad RoHS Modelo ECAD Tecnología
Paquete / Cubierta
Estilo de montaje
Configuración
Máx. voltaje VCEO colector-emisor
Voltaje de saturación colector-emisor
Máximo voltaje puerta-emisor
Colector de Corriente Continua a 25 C
Dp - Disipación de potencia
Temperatura de trabajo mínima
Temperatura de trabajo máxima
Serie
Empaquetado
Bourns IGBTs IGBT Discrete 600V, 5A in TO-252
Hoja de datos
24,136En existencias
Cinta cortada
S/ 8.68
S/ 5.57
S/ 3.76
S/ 2.99
S/ 2.74
Envase tipo carrete
S/ 2.54
MouseReel Disponible
Min.: 1
Mult.: 1
: 2,500
Si TO-252-3 SMD/SMT Single 600 V 1.5 V - 30 V, 30 V 10 A 82 W - 55 C + 150 C BID Reel, Cut Tape, MouseReel
Bourns IGBTs IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
Hoja de datos
5,797En existencias
S/ 31.72
S/ 18.37
S/ 15.41
S/ 14.67
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V 20 V 150 A 394 W - 40 C + 175 C BID Tube
Bourns IGBTs IGBT Discrete 650V, 40A, Medium speed switching in TO-247-3L
Hoja de datos
2,780En existencias
S/ 24.06
S/ 13.62
S/ 11.33
S/ 10.82
S/ 10.16
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.35 V 20 V 80 A 230 W - 40 C + 175 C BID Tube
Bourns IGBTs IGBT Discrete 650V, 40A, High speed switching in TO-247-3L
Hoja de datos
2,967En existencias
S/ 23.04
S/ 13.62
S/ 11.33
S/ 10.78
S/ 10.16
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V 20 V 80 A 300 W - 40 C + 175 C BID Tube
Bourns IGBTs IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L
Hoja de datos
2,773En existencias
S/ 29.31
S/ 18.37
S/ 15.41
S/ 14.67
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.42 V 20 V 150 A 394 W - 40 C + 175 C BID Tube
Bourns IGBTs IGBT Discrete 600V, 30A in TO-247
Hoja de datos
3,011En existencias
S/ 21.41
S/ 12.81
S/ 10.24
S/ 8.99
S/ 8.76
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 600 V 1.65 V - 20 V, 20 V 60 A 230 W - 55 C + 150 C BID Tube
Bourns IGBTs IGBT Discrete 650V, 50A in TO-247
Hoja de datos
2,979En existencias
1,230Se espera el 8/01/2027
S/ 26.31
S/ 15.73
S/ 13.12
S/ 11.29
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 100 A 416 W - 55 C + 150 C BID Tube
Bourns IGBTs IGBT Discrete 600V, 30A in TO-247N
Hoja de datos
2,999Se espera el 11/02/2027
S/ 19.97
S/ 11.13
S/ 9.19
S/ 8.72
S/ 7.90
Min.: 1
Mult.: 1
Si TO-247N-3 Through Hole Single 600 V 1.65 V - 20 V, 20 V 60 A 230 W - 55 C + 150 C BID Tube