650V Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density, demanded by various applications. These MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology, delivering high-speed performance. The 650V SiC MOSFETs offer the best-in-class 20mΩ to 55mΩ low on-resistance range. These MOSFETs feature a peak efficiency above 97% at 137W/inch³ power density. The 650V SiC MOSFETs come in a thermally enhanced, rugged, high-speed, surface-mount TOLL package. Typical applications include AI data center power supplies, EV charging, energy storage systems, and solar solutions.

Resultados: 14
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (PEN) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Estilo de montaje Paquete / Cubierta Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Modo canal
GeneSiC Semiconductor MOSFETs de SiC 650V 20mohm TO-LL G3F SiC MOSFET 1,678En existencias
Cinta cortada
S/81.43
S/59.56
S/53.56
S/53.52
Ver
Envase tipo carrete
S/50.21
Min.: 1
Mult.: 1
: 1,200
SMD/SMT TO-LL 650 V 20 mOhms Enhancement
GeneSiC Semiconductor MOSFETs de SiC 650V 20mohm TO-263-7 G3F SiC MOSFET 648En existencias
Cinta cortada
S/78.12
S/56.87
S/50.84
S/50.80
Envase tipo carrete
S/43.52
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7 1 Channel 650 V 100 A 20 mOhms Enhancement
GeneSiC Semiconductor MOSFETs de SiC 650V 27mohm TO-263-7 G3F SiC MOSFET 778En existencias
Cinta cortada
S/56.25
S/41.14
S/34.72
S/34.68
Envase tipo carrete
S/29.70
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7 1 Channel 650 V 78 A 27 mOhms Enhancement
GeneSiC Semiconductor MOSFETs de SiC 650V 27mohm TO-247-4 G3F SiC MOSFET 458En existencias
S/63.06
S/61.97
S/37.87
S/37.56
S/34.49
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 70 A 27 mOhms Enhancement
GeneSiC Semiconductor MOSFETs de SiC 650V 27mohm TO-LL G3F SiC MOSFET 1,200En existencias
Cinta cortada
S/56.13
S/42.55
S/36.36
S/36.24
Envase tipo carrete
S/33.20
Min.: 1
Mult.: 1
: 1,200
SMD/SMT TO-LL 650 V 27 mOhms Enhancement
GeneSiC Semiconductor MOSFETs de SiC 650V 40mohm TO-247-3 G3F SiC MOSFET 1,133En existencias
S/52.35
S/51.26
S/33.90
S/31.57
Ver
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 52 A 40 mOhms Enhancement
GeneSiC Semiconductor MOSFETs de SiC 650V 40mohm TO-263-7 G3F SiC MOSFET 750En existencias
Cinta cortada
S/47.80
S/34.14
S/28.88
S/27.75
Envase tipo carrete
S/23.36
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7 1 Channel 650 V 57 A 40 mOhms Enhancement
GeneSiC Semiconductor MOSFETs de SiC 650V 40mohm TO-247-4 G3F SiC MOSFET 1,050En existencias
S/48.03
S/45.70
S/32.42
S/30.17
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 52 A 40 mOhms Enhancement
GeneSiC Semiconductor MOSFETs de SiC 650V 40mohm TO-LL G3F SiC MOSFET 1,055En existencias
Cinta cortada
S/46.13
S/33.79
S/27.87
S/27.40
Ver
Envase tipo carrete
S/24.41
Min.: 1
Mult.: 1
: 1,200
SMD/SMT TO-LL 650 V 40 mOhms Enhancement
GeneSiC Semiconductor MOSFETs de SiC 650V 55mohm TO-247-3 G3F SiC MOSFET 1,129En existencias
S/41.57
S/40.72
S/27.44
S/24.33
S/22.58
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 42 A 55 mOhms Enhancement
GeneSiC Semiconductor MOSFETs de SiC 650V 55mohm TO-263-7 G3F SiC MOSFET 740En existencias
Cinta cortada
S/39.16
S/27.40
S/22.65
S/21.33
Envase tipo carrete
S/17.94
Min.: 1
Mult.: 1
: 800
GeneSiC Semiconductor MOSFETs de SiC 650V 55mohm TO-247-4 G3F SiC MOSFET 1,056En existencias
S/37.87
S/36.24
S/26.00
S/24.09
Ver
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 42 A 55 mOhms Enhancement
GeneSiC Semiconductor MOSFETs de SiC 650V 55mohm TO-LL G3F SiC MOSFET 1,200En existencias
Cinta cortada
S/32.42
S/23.39
S/19.77
S/18.22
S/18.14
Envase tipo carrete
S/16.19
Min.: 1
Mult.: 1
: 1,200
GeneSiC Semiconductor MOSFETs de SiC 650V 20mohm TO-247-4 G3F SiC MOSFET Plazo de entrega no en existencias 26 Semanas
S/78.98
S/76.60
S/50.91
S/47.76
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 90 A 20 mOhms Enhancement