TK15S04N1L,LQ
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Fabricante:
Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40W 1MHz Automotive; AEC-Q101
Hoja de datos
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Tips for Selecting Level Shifters (Voltage Translation ICs)
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 85412999
- ECCN:
- EAR99
- País de origen:
- Japón
- País de origen del ensamblaje:
- No disponible
- País de difusión:
- No disponible
En existencias: 1,682
-
Existencias:
-
1,682 Se puede enviar inmediatamenteSe ha producido un error inesperado. Vuelva a intentarlo más tarde.
-
Plazo de entrega de fábrica:
-
24 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Precio (PEN)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| Cinta cortada / MouseReel™ | ||
| S/9.07 | S/9.07 | |
| S/4.40 | S/44.00 | |
| S/3.97 | S/397.00 | |
| S/3.14 | S/1,570.00 | |
| S/2.96 | S/2,960.00 | |
| Envase tipo carrete completo (pedir en múltiplos de 2000) | ||
| S/2.67 | S/5,340.00 | |
| S/2.39 | S/9,560.00 | |
| S/2.38 | S/23,800.00 | |
Perú

Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2