IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

Resultados: 25
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (PEN) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Paquete / Cubierta Estilo de montaje Configuración Máx. voltaje VCEO colector-emisor Voltaje de saturación colector-emisor Máximo voltaje puerta-emisor Colector de Corriente Continua a 25 C Dp - Disipación de potencia Temperatura de trabajo mínima Temperatura de trabajo máxima Serie Calificación Empaquetado
STMicroelectronics IGBTs 600V 40A trench gate field-stop IGBT 606En existencias
S/25.30
S/16.58
S/12.18
S/10.86
S/9.61
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40H60DLFB Tube
STMicroelectronics IGBTs 600V 20A High Speed Trench Gate IGBT 990En existencias
S/12.11
S/7.79
S/5.33
S/4.32
Ver
Min.: 1
Mult.: 1
Si TO-220-3 Through Hole Single 600 V 2.3 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGP20V60DF Tube
STMicroelectronics IGBTs 600V 40A High Speed Trench Gate IGBT 770En existencias
S/19.66
S/12.88
S/9.61
S/8.02
Ver
Min.: 1
Mult.: 1
Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40V60DF Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package 760En existencias
Cinta cortada
S/11.64
S/7.51
S/5.18
S/4.20
Envase tipo carrete
S/3.79
S/3.73
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT Single 650 V 1.65 V - 20 V, 20 V 50 A 167 W - 55 C + 175 C Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT, V series 600 V, 30 A very high speed 4,752En existencias
1,000Se espera el 20/11/2026
Cinta cortada
S/15.34
S/10.00
S/7.28
S/6.11
Envase tipo carrete
S/5.64
S/5.33
Min.: 1
Mult.: 1
: 1,000
Si D2PAK-3 SMD/SMT Single 600 V 1.85 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGB30V60DF Reel, Cut Tape, MouseReel
STMicroelectronics IGBTs Trench gate H series 600V 15A HiSpd 4,081En existencias
3,000Se espera el 14/05/2027
S/9.89
S/6.34
S/4.32
S/3.66
Ver
Min.: 1
Mult.: 1
Si TO-220-3 FP Through Hole Single 600 V 1.6 V - 20 V, 20 V 30 A 30 W - 55 C + 175 C STGF15H60DF Tube
STMicroelectronics IGBTs 600V 60A trench gate field-stop IGBT 4,256En existencias
6,600Se espera el 18/11/2026
S/24.25
S/15.88
S/11.68
S/10.39
S/9.23
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60H65DFB Tube


STMicroelectronics IGBTs Trench gate field-stop IGBT, V series 600 V, 40 A very high speed 22En existencias
1,000Se espera el 4/12/2026
Cinta cortada
S/16.35
S/10.70
S/7.98
S/6.70
Envase tipo carrete
S/6.19
S/5.84
Min.: 1
Mult.: 1
: 1,000
Si D2PAK SMD/SMT Single 600 V 1.8 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGB40V60F Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 6 A low loss 2,063En existencias
2,500Se espera el 26/02/2027
Cinta cortada
S/7.71
S/4.83
S/3.20
S/2.53
Envase tipo carrete
S/2.06
Ver
Min.: 1
Mult.: 1
: 2,500
Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGD6M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBTs 600V 30A High Speed Trench Gate IGBT 530En existencias
S/16.97
S/11.13
S/8.29
S/6.93
Ver
Min.: 1
Mult.: 1
Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGW30V60DF Tube
STMicroelectronics IGBTs 600V 60A High Speed Trench Gate IGBT 383En existencias
1,800En pedido
S/19.70
S/10.98
S/9.07
S/7.75
Min.: 1
Mult.: 1
Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60V60DF Tube
STMicroelectronics IGBTs 600V 60A Trench Gate 1.8V Vce IGBT 717En existencias
S/19.85
S/11.09
S/9.15
S/8.95
S/7.82
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60V60F Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l 517En existencias
S/13.12
S/8.29
S/5.88
S/4.90
S/4.28
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long 599En existencias
600Se espera el 15/10/2026
S/12.65
S/6.85
S/5.57
S/4.59
S/4.24
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 50 A 167 W - 55 C + 175 C Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long 493En existencias
S/15.73
S/10.08
S/9.07
S/6.15
Ver
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 72 A 227 W - 55 C + 175 C STGWA40HP65FB2 Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long 581En existencias
S/22.46
S/14.71
S/10.86
S/8.60
Min.: 1
Mult.: 1
TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 115 A 375 W - 55 C + 175 C Tube
STMicroelectronics IGBTs 600V 20A Hi Spd TrenchGate FieldStop 162En existencias
S/16.04
S/10.47
S/7.59
S/6.38
Ver
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 600 V 1.8 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGW20V60F Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
2,390En pedido
S/24.56
S/13.94
S/11.60
S/10.32
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGWA40H120DF2 Tube


STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT 280En existencias
S/18.41
S/12.07
S/8.99
S/7.51
Ver
Min.: 1
Mult.: 1
Si TO-3PF Through Hole Single 650 V 2 V - 20 V, 20 V 80 A 62.5 W - 55 C + 175 C STGFW40H65FB
STMicroelectronics IGBTs 600V 20A Hi Spd TrenchGate FieldStop
1,199Se espera el 2/11/2026
S/13.74
S/8.91
S/6.27
S/5.25
Ver
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 600 V 2 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGW20H60DF Tube
STMicroelectronics STGB20H65FB2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high-speed HB2 series IGBT in a D2PAK package Plazo de entrega no en existencias 20 Semanas
Cinta cortada
S/2.62
S/2.48
Min.: 2,000
Mult.: 1,000
: 1,000
- 20 V, 20 V Reel
STMicroelectronics STGB20H65DFB2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package Plazo de entrega no en existencias 15 Semanas
Envase tipo carrete
S/3.73
S/3.40
S/3.39
Min.: 1,000
Mult.: 1,000
: 1,000
- 20 V, 20 V Reel
STMicroelectronics STGP30H65DFB2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220 packag Plazo de entrega no en existencias 15 Semanas
S/4.09
S/3.88
Min.: 1,000
Mult.: 1,000
- 20 V, 20 V Tube

STMicroelectronics IGBTs Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ Plazo de entrega no en existencias 20 Semanas
Cinta cortada
S/2.21
S/2.13
S/2.05
Min.: 2,000
Mult.: 1,000
: 1,000
Si D2PAK-3 SMD/SMT Single 435 V 1.1 V - 12 V, 16 V 25 A 150 W - 55 C + 175 C STGB25N40LZAG AEC-Q101 Reel

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss in a TO-247 long leads Plazo de entrega no en existencias 22 Semanas
S/6.38
S/5.92
S/5.57
Min.: 600
Mult.: 600
Si - 20 V, 20 V STGWA30M65DF2 Tube