M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

Resultados: 8
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Descripción Hoja de datos Disponibilidad Precio: (PEN) Filtre los resultados en la tabla por precio unitario en función de su cantidad.
Cantidad RoHS Modelo ECAD Tecnología
Paquete / Cubierta
Estilo de montaje
Configuración
Máx. voltaje VCEO colector-emisor
Voltaje de saturación colector-emisor
Máximo voltaje puerta-emisor
Colector de Corriente Continua a 25 C
Dp - Disipación de potencia
Temperatura de trabajo mínima
Temperatura de trabajo máxima
Serie
Empaquetado
STMicroelectronics IGBTs Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT
Hoja de datos
1,074En existencias
S/34.64
S/16.62
S/16.27
Min.: 1
Mult.: 1
Si Max247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 100 A 535 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
Hoja de datos
457En existencias
S/21.56
S/12.65
S/9.77
S/8.33
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 30 A 283 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Hoja de datos
354En existencias
S/26.66
S/16.19
S/13.55
S/11.60
S/11.41
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
Hoja de datos
880Se espera el 8/10/2026
S/23.08
S/15.26
S/11.13
S/9.30
S/8.80
Min.: 1
Mult.: 1
Si TO-220-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Hoja de datos
1,393Se espera el 19/10/2026
S/23.04
S/13.12
S/10.90
S/9.19
S/8.80
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Hoja de datos
600Se espera el 24/09/2027
S/24.33
S/13.82
S/12.96
S/10.28
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Hoja de datos
592Se espera el 13/08/2027
S/18.33
S/12.03
S/8.76
S/7.24
S/6.34
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Hoja de datos
Plazo de entrega no en existencias 22 Semanas
S/28.26
S/16.35
S/13.58
S/11.21
S/10.74
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 326 W - 55 C + 175 C M Tube