STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Resultados: 17
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (PEN) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Paquete / Cubierta Estilo de montaje Configuración Máx. voltaje VCEO colector-emisor Voltaje de saturación colector-emisor Máximo voltaje puerta-emisor Colector de Corriente Continua a 25 C Dp - Disipación de potencia Temperatura de trabajo mínima Temperatura de trabajo máxima Serie Calificación Empaquetado
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 120 A low loss 361En existencias
S/42.00
S/25.34
S/22.34
S/20.86
Min.: 1
Mult.: 1
Si Max247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 160 A 625 W - 55 C + 175 C STGYA120M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss 624En existencias
S/29.97
S/17.83
S/14.95
S/12.81
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 468 W - 55 C + 175 C STGW75M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss 5,000En existencias
Cinta cortada
S/6.58
S/4.16
S/2.78
S/2.19
Envase tipo carrete
S/1.67
Ver
Min.: 1
Mult.: 1
: 2,500
Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGD4M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss 1,175En existencias
S/12.22
S/6.07
S/5.49
S/4.44
Ver
Min.: 1
Mult.: 1
Si TO-220FP-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 38 W - 55 C + 175 C STGF30M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 15 A low loss 3En existencias
S/8.76
S/4.13
S/3.28
S/2.80
Ver
Min.: 1
Mult.: 1
Si TO-220FP-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 30 A 31 W - 55 C + 175 C STGF15M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package 1,067En existencias
Cinta cortada
S/10.28
S/6.62
S/4.52
S/3.62
Envase tipo carrete
S/3.18
S/3.16
Min.: 1
Mult.: 1
: 1,000
Si D2PAK-3 SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 30 A 136 W - 55 C + 175 C STGB15M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss 1,065En existencias
Cinta cortada
S/13.27
S/8.68
S/6.03
S/4.90
Envase tipo carrete
S/4.55
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGB30M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 6 A low loss 2,063En existencias
2,500Se espera el 15/01/2027
Cinta cortada
S/7.05
S/4.44
S/2.91
S/2.31
Envase tipo carrete
S/1.88
Ver
Min.: 1
Mult.: 1
: 2,500
Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGD6M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss 7En existencias
1,000Se espera el 25/12/2026
S/14.21
S/7.51
S/6.42
S/5.29
Ver
Min.: 1
Mult.: 1
Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGP30M65DF2 Tube
STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT 14En existencias
S/28.26
S/18.72
S/13.70
S/11.48
S/10.74
Min.: 1
Mult.: 1
- 20 V, 20 V HB2 AEC-Q100 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 10 A low loss
3,000En pedido
S/7.71
S/4.90
S/3.30
S/2.62
Ver
Min.: 1
Mult.: 1
Si STGP10M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
586En pedido
S/20.59
S/11.52
S/9.54
S/8.06
S/7.47
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads
600Se espera el 25/12/2026
S/23.59
S/13.27
S/11.02
S/9.34
S/9.11
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C HB2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss
395Se espera el 26/02/2027
S/28.84
S/17.01
S/14.25
S/12.22
S/12.11
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 488 W - 55 C + 175 C STGWA75M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package Plazo de entrega no en existencias 20 Semanas
Cinta cortada
S/10.90
S/7.05
S/4.83
S/3.88
Envase tipo carrete
S/3.57
S/3.47
Min.: 1
Mult.: 1
: 1,000
Si STGB10M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss Plazo de entrega no en existencias 20 Semanas
Cinta cortada
S/1.74
S/1.73
S/1.69
S/1.63
Min.: 2,000
Mult.: 1,000
: 1,000
Si D2PAK-3 SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGB4M65DF2 Reel
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 6 A low loss Plazo de entrega no en existencias 20 Semanas
S/7.40
S/3.53
S/3.16
S/2.50
Ver
Min.: 1
Mult.: 1
Si TO-220-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGP6M65DF2 Tube